Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2779-2783

  Vaudo, R P ^a,c   Goepfert, I D ^a   Moustakas, T D ^a   Beyea, D M ^b   Frey, T J ^b   Meehan, K ^b,d  

^a BOSTON UNIVERSITY   (United States)

^b POLAROID CORPORATION   (United States)

^c Advanced Technology Materials Inc   (United States)

^d Biocontrol Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; ENERGY GAP; FABRICATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

CARRIER RECOMBINATION; ELECTRON BEAM EVAPORATION; FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; LUMINESCENT CENTERS; RAPID THERMAL ANNEALING;

LIGHT EMITTING DIODES;

EID: 0030108243     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361109     Document Type: Article

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