Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 159-166

  Wong, W S ^a   Li, N Y ^a   Dong, H K ^a   Deng, F ^a   Lau, S S ^a   Tu, C W ^a   Hays, J ^b   Bidnyk, S ^b   Song, J J ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; DEPOSITION; FREE RADICALS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SURFACES; TEMPERATURE; THIN FILMS;

CARRIER MOBILITY; GAS SOURCE MOLECULAR BEAM EPITAXY; X RAY ROCKING CURVE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030195434     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01067-X     Document Type: Article

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