Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 80, Issue 1, 1996, Pages 594-596

  Reynolds, D C ^a   Look, D C ^a   Kim, W ^b   Aktas, O ^b   Botchkarev, A ^b   Salvador, A ^b   Morkoc H ^b,d   Talwar, D N ^c,e  

^a WRIGHT STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c WRIGHT PATTERSON AIR FORCE BASE   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e INDIANA UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001340851     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362724     Document Type: Article

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