Design and fabrication of double modulation doped InAlAs/InGaAs/InAs heterojunction FET's for high-speed and millimeter-wave applications

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 21-30

  Xu, Dong ^a   Heiß, Heiner G ^a   Kraus, Stefan A ^a   Sexl, M ^a   Bohm G ^a   Trankle G ^a   Weimann, G ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Epitaxial growth; High speed circuits devices; Millimeter wave fet's; Modfet's; Semiconductor device fabrication; Semiconductor growth; Semiconductor heterojunctions

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; MILLIMETER WAVE DEVICES; OPTIMIZATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

COULOMB SCATTERING; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); TWO DIMENSIONAL ELECTRON GAS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031674724     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658807     Document Type: Article

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