Temperature dependent study of the microwave performance of 0.25-μm gate GaAs MESFET's and GaAs pseudomorphic HEMT's

IEEE Transactions on Electron Devices

Volumn 43, Issue 6, 1996, Pages 852-860

  Feng, M ^a   Scherrer, D R ^a   Apostolakis, P J ^a   Kruse, J W ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; ION IMPLANTATION; MESFET DEVICES; MICROWAVES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; TEMPERATURE; TRANSPORT PROPERTIES;

CRYOGENIC ON WAFER MICROWAVE PROBING SYSTEM; CRYOGENIC TEMPERATURE; CURRENT GAIN CUTOFF FREQUENCY; ELECTRON VELOCITY; NOISE FIGURE; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030172923     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502115     Document Type: Article

References (37)

1. R, Dingle, H. L. Stomer, A. G. Gossard, and W. Wiegmann, "Electron mobility's in modulated-doped semiconductor heterojunction superlattices," Appl Phys. Lett., vol. 33, p. 1088, 1988.
2. T. Mimura, S;. Hiyamizu, T. Fujii, and K. Nanbu, "A new field effect transistor with selective doped GaAs/AlGaAs heterojunction,'' Jpn. J. Appl. Phyi., vol. 19. p. L255, 1980.
3. M. Feng, T. R. Lepkuwski, G. W. Wang, C. L. Lau, and C. Ito, "Millimeter-wave ion impanted OaAs MESFET's," in 15th Int. Symp. Gallium Arsenide and Related Compounds, Seattle, WA, 1988, pp. 513-517.
4. M. Feng. C. L. Lau, V. Eu, and C. Jto. "Does two-dimensional electron gas effect contribute to high-frequency and high-speed device performances?." Appl. Phys. Leu., vol. 57, pp. 1233-1235, 1990.
5. M. Feng, J. Laskar, W. Miller, J. Kolodzey, and G. E. Stillman, "Characterization of ion implanted InGaAs/GaAs 0.25 mm gate MESFET's with /, > 1ÜO GHz," Appl. Phys. Lett, vol 58, June 1990.
6. J. Laskar. S. Maranoski, S, Caracci. M. Feng, and J. Kolodzey, "Reduced lattice temperature high-speed operation of pscudomorphic InGaAs/GaAs FET's," Appl. Phys. Lett., vol. 59, no. 19. pp. 2412-2414, 1991.
7. T. Mizutani and K. Maezawa, "Temperature dependence of high frequency performance of AlGaAs/InGaAs pseudomorphic HEMT's," IEEE Electron Device Lett., vol. 13, pp. 8-10, 1992.
8. K. Joshin, Y. Mimino, S. Ohmura, and Y. Hirachi, "Noise performance at cryogenic temperatures of AlGaAs/InGaAs HEMT's with 0.15 p.m T-shaped WSir gates." IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 515-519, 1992.
9. M. Feng and C. L. I.au, "Ion implanted InGaAs MESFET's on GaAs substrate for low-cost millimeter-wave 1C application," IEEE Trans. Electron Devices, vol. 39, no. 3 pp. 484-493 Mar. 1992.
10. J. W. Kruse, "Microwave temperature dependent modeling of 0.25 micron gate length GaAs MESFET's," M.S. thesis under Prof. M. Feng, University of Illinois at Urbana-Champaign, 1992.
11. M. Feng, J. Laskar, and J. Kruse, "Fundamental speed limitation of GalnAs MESFET's and HEMT's," in Int. Symp. GaAs and Related Compounds, Inst. Phvs. Conf. Ser. no. 129, Karuizawa, 1992, pp. 741-747.
12. M. Feng and J. Laskar, "On the speed and noise performance of direct ion implanted GaAs MESFET's," IEEE Trans. Electron Devices, vol. 40. no. 1, pp. 9-17, 1993.
13. M. Feng, V. Eu, M. Siracusa, E. Watkins, H. Kimura, and H. Winston, "Silicon implanted super low-noise GaAs MESFET," Electron Lett., vol. 18, pp. 21-23, 1982.
14. M. Feng, H. Kanber, V. K. Eu, and M. Siracusa, "Ultra high-frequency operation of ion implanted GaAs MESFET's," Appl. Phys. Lett., vol. 44, pp. 231-233, 1984.
15. P. C. Chao et al., ''DC and microwave characteristics of sub-0.1 urn AlGaAs/InGaAs pseudomorphic MODFET's," IEEE Trans. Electron Devices, vol. 35, p. 879, 1988.
16. J. Huang, M. Zaitlin, W. Hole, M. Adlerstein, P. Lyman, P. Saledas, G. Jackson, E. Tong, and G. Flynn. ''High-gain low-noise, 1/2 //m pulsed doped pseudomorphic HEMT," IF.EE Electron Device Lett., vol 10, p. 511, 1989.
17. L. D. Nguyen, A. S. Brown, M. A. Thompson, L. M. Jelloiau, L. E. Larson, and M. Matloubian, "650 A self-aligned gate pseudomorphic AlQ.48lnn.52As/Gan.2oIno.8oAs high electron mobility transistors," IEEE Electron Device Lett., vol. 13, p. 143, 1992.
18. N. Moll, M. R. Hueschen, and A. Fisher-Colbrie, "Pulsed-doped AlGaAs/InGaAs pseudomorphic MODFET's," IhEE Trans. Electron Devices, vol. 35, p. 879, 1988.
19. C. L. Lau, M. Feng, T. R. Lepkowski, G. W. Wang, Y. Chang, and C. Ito, "Half-micron gate length ion-implanted GaAs MESFET with 0.8 dB noise figure at 16 GHz," IEEE Electron Device Lett., vol. 10, pp. 409-411, 1989.
20. K. Hosogi, N. Ayaki, T. Kato. T. Oku, Y. Kohno, H. Nakano, T. Shitnura, H. Takano, and K. Nishitani, "Super low-noise self-aligned gate GaAs MESFET with noise figure of 0.87 dB at 12 GHz," IEEE MTT-S Dig., p. 1257, 1990.
21. S. Nakajima, K. Otobe, N. Kuwata, N. Shiga, K. Matsuzaki, and H. Hayashi, "Pulsed-doped GaAs MESFET's with planar self-aligned gate for MMIC," IEEE MTT-S Dig., p. 1081, 1990.
22. K. Onodera, K. Nish.im.ura, S. Sugitani, and K. Asai, "Ultra-low-noise fully ion implanted GaAs MRSFET with Au/WSiN refractory metal gate," IEDM Tech. Dig., pp. 962-964, 1991.
23. K. L. Tan, R. M. Dia, D. C. Streit, L. K. Shaw, A. C. Han, M. D. Sholley, P. H. Liu, T. Q. Trinh, T. Lin, and H. C. Yen, "60 GHz pseudomorphic AlGaAs/InGaAs low-noise HEMT's," IEEE Electron Device Lett., vol. 12, p. 23, 1991.
24. K. H. G. Dun, P. C. Chao, P. Ho, A. Tessmer, S. M. J. Liu, M. Y. Kao, P. M. Smith, and J. M. Balcngall, "W-band InGaAs HEMT low-noise amplifiers," IEEE MTT-S Dig., p. 595. 1990.
25. 2 in H-2-AS4 atmosphere," J. Elect. Mater., vol. 10, no. 6, pp. 973-986, 1981.
26. J. R. Middleton, D. Scherrer, P. J. Apostolakis, and M. Feng, "Optimization of ion implantation and annealing schedule for 0.25 /im gate MESFET technology," in 1994 U.S. Conf. GaAs Manufact. Techn., Las Vegas, NV, 1994, pp. 119-123.
27. T. W. Windhorn, "Electron drift velocities at high electrical fields in GaAs and InGaAs," Ph.D. dissertation under Prof. G. E. Stillman, University of Illinois at Urbana-Champaign, 1982.
28. 0.43As/InP HEMT," IEEEIEDM'91, p. 9.3.1, 1991.
29. T. Eiioki, A. Kunihiio, A. Kohzen, and Y. Ishii, "InGaAs/InP double channel HEMT on InP," in Fourth Int. Conf. InP and Related Maier. Conf Proc., Apr. 21-424, 1992, p. 15.
30. D. Heston, "Low noise amplifier linearity," in IEEE-MTT Symp. Panel Session, San Diego, ÇA, May 26, 1994.
31. [31 ] H. Statz, H. A. Haus, and R. A. Pucel, "Noise characteristics of gallium arsenide field-effect transistors," IEEE Trans. Electron Devices, vol. ED-21, pp. 549-562, Sept. 1974.
32. R. A. Pucel, H. A. Haus, and H. Statz, "Signal and noise properties of gallium arsenide field effect transistors," in Advances in Electronics and Electron Physics. New York: Academic, vol. 38, pp. 228-265, 1995.
33. W. Shockley. J. A. Copeland, and R. P. James, "The impedance field method of nuise calculations in active semiconductor devices," in Quantum Theory of Atoms, Molecules, and. the Solid Slate, P. O. l ,owdin, Ed. New York: Academic, pp. 537-563, 1966.
34. A. van der Ziel, "Thermal noise in the hot electron region in FET's," IEEE Trans. Electron Devices, vol. ED-18, p. 977, Oct. 1971.
35. R. Reeves and V. Brandy, "Monolithic Ka-band FET receiver chips," 1994 MTT-S-Dig., p. 119. 1994.
36. D. K. Umemoto, D. C. Streit, K. W. Kobayashi, A. K. Oki, "35 GHz HEMT amplifiers fabricated using integrated HEMT-HBT material grown by selective MBE," IEEE Microwave Guide Wave Lett., vol. 4, no. 11, p. 361, 1994.
37. C. S. Wu, C. K. Pao, W. Yau, H. Kanbcr, M. Hu, S. X. Bar, A. Kurdoghilian, Z. Bardai, D. Bosch, S. Seashore, and M. Gawronski, "Pseudomorphic HEMT manufacturing technology for multifunctional Ka-band MMIC applications," IEEE Trans. Microwave Theory Tech., vol. 43. no. 2, pp. 257-266, 1995.