0.05-μm-gate InAlAs/ingaas high electron mobility transistor and reduction of its short-channel effects

Japanese Journal of Applied Physics

Volumn 33, Issue 1, 1994, Pages 798-803

  Enoki, Takatomo ^a   Tomizawa, Masaaki ^a   Umeda, Yohtaro ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Current gain cutoff frequency; Gate length; HEMT; InAIAs; InGaAs; Short channel effect; Subthreshold

Indexed keywords

CHARGE CARRIERS; CRYSTAL LATTICES; DIELECTRIC FILMS; ELECTRIC CURRENTS; ETCHING; GATES (TRANSISTOR); PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

CURRENT GAIN CUTOFF; GATE LENGTH; INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; SHORT CHANNEL EFFECT; SUBTHRESHOLD;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028274460     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.798     Document Type: Article

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