Experimental and Theoretical Characteristics of High Performance Pseudomorphic Double Heterojunction InA1As/In0.7Ga0.3As/InA1As HEMT's

IEEE Transactions on Electron Devices

Volumn 42, Issue 6, 1995, Pages 1017-1025

  Kwon, Youngwoo ^a   Pavlidis, Dimitris ^a   Brock, Timothy L ^a   Streit, Dwight C ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009957978     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.387231     Document Type: Article

References (21)

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