A10.251n0.75P/A10.48In0.52As /Ga0.35In0.65 As Graded Channel Pseudomorphic HEMT's with High Channel-Breakdown Voltage

IEEE Electron Device Letters

Volumn 15, Issue 1, 1994, Pages 33-35

  Chough, K B ^a   Caneau, C ^a   Hong, W P ^a   Song, J I ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL MODIFICATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ENERGY GAP; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON WAVE FUNCTION; HIGH CHANNEL BREAKDOWN VOLTAGE; INTERFACE SCATTERING; LARGE GATE LEAKAGE CURRENT; LOW SOURCE DRAIN BREAKDOWN VOLTAGE; QUANTUM WELL CHANNEL; TWO-DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028257322     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.289470     Document Type: Article

References (9)

1. L. D. Nguyen, A. S. Brown, M. A. Thomson, L. M. Jelloian L. E. Larson, and M. Matloubian, 650°A self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors, IEEE Electron Device Lett., vol. 13, pp. 143–145, 1992.
2. K. B. Chough, T. Y. Chang, M. D. Feuer, and B. Lalevic, Comparison of device performance of highly strained Ga1-xInxAs/Al0.48In0.52As (0.53 < 5 x < 5 0.90) MODFET's, Electron. Lett., vol. 28, pp. 329–330, 1992.
3. G. I. Ng, D. Pavlidis, M. Jaffe, J. Singh, and H. F. Chau, Design and experimental characteristics of strained In x Ga 1-x As/ In 0.52 Al l.48 As (0.53 <5 x < 5 0.65) HEMT's, IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2249–2259, 1989.
4. H. Dambkes and P. Marschall, High performance Al 0,48 In 0.52 As/n + Ga 0.47 In 0.53 As HFET's, Electron. Lett., vol. 26, no. 7, pp. 488–489, 1990.
5. Y.-C. Pao, C. K. Nishimoto. R. Majidi-Ahy, J. Archer, N. G. Bechtel, and J. S. Harris, Characterization of surface-undoped In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/InP high electron mobility transistors, IEEE Trans. Electron Devices, vol. 37, no. 10, pp. 2165–2171, 1990.
6. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, Current-voltage and capacitance-voltage characteristics of MODFET, IEEE Trans. Electron Devices, vol. 30, p. 207, 1983.
7. T. K. Yoo, P. Mandeville, H. Park, W. J. Schaff, and L. F Eastman, Double modulation-doped AIGaAs/InGaAs heterostructure with a graded composition in the quantum well, Appl. Phys. Lett., vol. 61, pp. 1942-1944, 1992.
8. K. B. Chough, C. Caneau, W-P Hong, and J.-I. Song. Investigation of Alx Gaylnl-x-yP as a Schottky layer of AlInAs/GalnAs high electron mobility transistors, submitted to Appl. Phys. Lett. In publication.
9. L. P. Sadwick, C. W. Kim, K. L. Tan, and D. C. Streit, Schottky barrier heights of n-type and p-type Al 0.48 In 0.52 AS, IEEE Electron Device Lett., vol. 12, pp. 626--628, 1991.