0.15μm double modulation doped InAsinserted-channel MODFETs: Gate recess for optimum RF performances

Electronics Letters

Volumn 33, Issue 6, 1997, Pages 532-533

  Xu, D ^a,b   Heiss H ^a,c   Kraus, S ^a   Sexl, M ^a   Bohm G ^a   Trankle G ^a,d   Weimann, G ^a,e   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b NTT CORPORATION   (Japan)

^c SIEMENS AG ÖSTERREICH   (Austria)

^d LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^e FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Indium phosphide; MODFET

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; ETCHING; FREQUENCY RESPONSE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

GATE RECESS; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

GATES (TRANSISTOR);

EID: 0031096560     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970296     Document Type: Article

References (3)

1. AKAZAKI, T., ENOKI, T., ARAI, K., UMEDA, Y., and ISHII, Y.: 'Highfrequency performance for sub-0.1 mm gate InAs-inserted-channel InAlAs/In-GaAs HEMT', Electron. Lett., 1992, 28, (13), pp. 1230-1231
2. HUR, K.Y., MCTAGGART, R.A., MILLER, AB., HOKE, W.E., LEMONIAS, P.J., and AUCOIN, L.M.: 'DC and RF characteristics of double recessed and double pulse doped AlInAs/GaInAs/InP HEMTs', Electron. Lett., 1995, 31, (2), pp. 135-136
3. HEIß, H: PhD Dissertation, Technical University Munich, 1997