High-performance InP-based HEMT's with a graded pseudomorphic channel

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1994, Pages 427-430

  Chough, K B ^a   Hong, Brian W P ^a   Caneau, C ^a   Song, J I ^a   Jeon, K I ^a   Hong, S C ^a   Lee, K ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL MODIFICATION; COMPOSITION; ELECTRIC BREAKDOWN; INTERFACES (MATERIALS); IONIZATION OF SOLIDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

CHANNEL BREAKDOWN; ELECTRON WAVE FUNCTION; ENHANCED IMPACT IONIZATION; GRADED PSEUDOMORPHIC CHANNEL; INTERFACE SCATTERING; MOLE FRACTION; QUANTUM WELL CHANNEL; SCHOTTKY LAYER; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028199564     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)