Improved InAlAs/InGaAs HEMT Characteristics by Inserting an InAs Layer into the InGaAs Channel

IEEE Electron Device Letters

Volumn 13, Issue 6, 1992, Pages 325-327

  Akazaki, Tatsushi ^a   Arai, Kunihiko ^a   Enoki, Takatomo ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS--TRANSPORT PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS;

INDIUM ARSENIDE; TRANSCONDUCTANCE;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0026880855     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145073     Document Type: Article

References (11)

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2. P. C. Chao et al., “ W -band low-noise InAlAs-InGaAs lattice-matched HEMT’s,” IEEE Electron Device Lett., vol. 11, p. 59, 1990.
3. G. I. Ng et al., “Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties,” Appl. Phys. Lett. vol. 52, p. 728, 1988.
4. K. Matsumura et al., “A new HEMT structure with a quantum well formed by inserting monolayers in the channel,” in Proc. Int. Symp. GaAs and Related Compounds (Inst. Phys. Conf. Ser. 112) (Jersey, U.K.), 1990, p. 465.
5. C. C. Eugster, T. P. E. Broekaert, J. A. del Alamo, and C. G. Fonstad, “An InAlAs/InAs MODFET,” IEEE Electron Device Lett., vol. 12, p. 707, 1991.
6. G. J. Whaley and P. I. Cohen, “The growth of strained InGaAs on GaAs: Kinetics versus energetics,” J. Vac. Sci. Technol., vol. B6, p. 625, 1988.
7. T. Enoki, K. Arai, Y. Ishii, and T. Tamamura, “Delay times of l/4- μ m-gate InAlAs/InGaAs HEMT’s,” in Extended Abstr. 22nd Int. Conf. Solid State Devices and Mater. (Sendai, Japan), 1990, p. 87.
8. T. Enoki, K. Arai, and Y. Ishii, “Delay time analysis for 0.4- to 5- μ m-gate InAlAs/InGaAs HEMT’s,” IEEE Electron Device Lett., vol. 11, p. 502, 1990.
9. P. R. Berger, Y. C. Chen, J. Singh, and K. Bhattacharya, “Growth modes of (100) In x Ga 1- x As growth on GaAs/InP below critical thickness—Consequences for pseudomorphic MODFETs,” in Proc. Int. Symp. GaAs and Related Compounds (Inst. Phys. Conf. Ser. 106), (Karuizawa, Japan), 1989, p. 183.
10. G-I. Ng, D. Pavlidis, M. Jaffe, J. Singh, and H-F. Chau, “Design and experimental characteristics of strained In 0. 52 Al 0. 48 As/ In x Ga 1- x As (x > 0.53) HEMT’s,” IEEE Trans. Electron Devices, vol. 36, p. 2249, 1989.
11. W.-P. Hong and P. K. Bhattacharya, “High-field transport in InGaAs/lnAlAs modulation-doped heterostructures,” IEEE Trans. Electron Devices, vol. ED-34, p. 1491, 1987.