Improving the mobility of an In0.52Al0.48As/In 0.53Ga0.47As inverted modulation-doped structure by inserting a strained InAs quantum well

Applied Physics Letters

Volumn 65, Issue 10, 1994, Pages 1263-1265

  Akazaki, Tatsushi ^a   Nitta, Junsaku ^a   Takayanagi, Hideaki ^a   Enoki, Takatomo ^b   Arai, Kunihiro ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

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EID: 21544434154     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.112089     Document Type: Article

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