Extremely high gain 0·15 µm gate-length InAlAs/InGaAs/InP HEMTs

Electronics Letters

Volumn 27, Issue 4, 1991, Pages 325-327

  Ho, P ^a   Kao, M Y ^a   Chao, P C ^a   Duh, K H G ^a   Ballingall, J M ^a   Allen, S T ^a   Tessmer, A J ^a   Smith, P M ^a  

^a General Electric Company Syracuse ^*  (United States)

Author keywords

Transistors

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS - APPLICATIONS; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS; SEMICONDUCTOR MATERIALS - GROWTH;

CAP LAYER; EPITAXIAL STRUCTURE; HIGH GAIN GATE LENGTH HEMT'S; LATTICE GROWING;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0026107923     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19910206     Document Type: Article

References (9)

1. Chao, P. C., Tessmer, A. J., Duh, K. H. G., Ho, P., Kao, M. Y., Smith, P. M., Ballingall, J. M., Liu, S. M. J., and Jabra, A. A.: ‘W-band low-noise InAlAs/InGaAs lattice-matched Hemty, IEEE Electron Dev. Lett., 1990, 11, pp. 59–62
2. Mishra, U. K., Brown, A. S., Rosenbaum, S. E., Hooper, C. E., Pierce, M. W., Delaney, M. J., Vaughn, S., and White, K.: ‘Microwave performance of AlInAs-GaInAs HEMT’s with 0·2- and 0·1-µm gate length’, IEEE Electron Dev. Lett., 1988, 9, pp. 647–649
3. Mishra, U. K., Brown, A. S., Jelloian, L. M., Thompson, M., Nguyen, L. D., and Rosenbaum, S. E.: ‘Novel high performance self-aligned 015 micron long T-gate AlInAs-GalnAs HEMTs’. IEDM Technical Digest, pp. 101–104
4. Smith, P. M., Chao, P. C., Ho, P., Duh, K. H., Kao, M. Y., Ballingall, J. M., Allen, S. T., and Tessmer, A.: ‘Microwave InAlAs/InGaAs/InP HEMTs: Status and applications’. Proc, of the 2nd Int. conf. on Indium Phosphide and Related materials, Colorado, 1990, pp. 39–43
5. 0·47As/InP high electron mobility transistors’, IEEE Trans. Electron Dev., 1990, 10, pp. 2165–2170
6. Riaziat, M., Pao, Y. C., Nishimoto, C., Zdasiuk, G., Bandy, S., and Weng, S. L.: ‘HEMT millimetre wave monolithic amplifier on InP’, Electron. Lett., 1989, 25, pp. 1328–1329
7. Ketterson, A. A., Laskar, J., Brock, T. L., Adesida, I., Kolodzey, J., Aina, O. A., and Hier, H.: ‘DC and RF characterization of short-gate-length InGaAs/InAlAs MODFET’s’, IEEE Trans., 1989, ED-36, pp. 2361–2363
8. Ho, P., Chao, P. C., Duh, K. H. G., Jabra, A. A., Ballingall, J. M., and Smith, P. M.: ‘Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxy’. 1988 IEDM Technical Digest, pp. 184–186
9. max of 350 GHz’. 1988 IEDM Technical Digest, pp. 172–175