0.10 μm graded InGaAs Channel InP HEMT with 305 GHz fT and 340 GHz fmax

IEEE Electron Device Letters

Volumn 15, Issue 11, 1994, Pages 477-479

  Wojtowicz, M ^a   Lai, R ^a   Streit, D C ^a   Ng, G I ^a   Block, T R ^a   Tan, K L ^a   Liu, P H ^a   Freudenthal, A K ^a   Dia, R M ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPOSITION EFFECTS; ELECTRIC NETWORK ANALYSIS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

CONDUCTION BAND ENERGY; ELECTRON WAVEFUNCTIONS; GRADED CHANNEL DESIGN; THREE TERMINAL DEVICE; UNITY CURRENT GAIN FREQUENCY; UNITY POWER GAIN FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028543007     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.334673     Document Type: Article

References (10)

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