Design and Characteristics of InGaAs/InP Composite-Channel HFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 8, 1995, Pages 1413-1418

  Enoki, Takatomo ^a   Arai, Kunihiro ^a   Kohzen, Atsuo ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRONS; HETEROJUNCTIONS; IONIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

COMPOSITE CHANNEL; DRIFT VELOCITY; ELECTRIC CURRENT GAIN; ELECTRON MOBILITY; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; KINK PHENOMENA;

FIELD EFFECT TRANSISTORS;

EID: 0029357672     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.398656     Document Type: Article

References (16)

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