InGaAs/InAlAs HEMTs with extremely low source and drain resistances

Electronics Letters

Volumn 32, Issue 17, 1996, Pages 1619-1621

  Kraus, S ^a   Heiss H ^a   Xu, D ^a   Sexl, M ^a   Bohm G ^a   Trankle G ^a   Weimann, G ^a  

^a NONE

Author keywords

High electron mobility transistors

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON TUNNELING; OHMIC CONTACTS; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030214249     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961043     Document Type: Article

References (1)

1. LEE, S.J., and CROWELL, C.R.: 'Parasitic source and drain resistance in high electron mobility transistors', Solid-State Electron., 1985, 288, (7), pp. 659-668