High current density double modulationdoped Al0.48In0.52As-Ga0.35In0.65As millimetre-wave HEMT

Electronics Letters

Volumn 29, Issue 25, 1993, Pages 2222-2223

  Gueissaz, F ^a   Enoki, T ^a   Ishii, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

High electron mobility transistors; Modulation doping

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; GAIN MEASUREMENT; HETEROJUNCTIONS; MILLIMETER WAVES; MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

DOPANTS; DRAIN CURRENT DENSITY; ELECTRIC CURRENT GAIN; HETEROSTRUCTURES; MODULATION DOPING; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0027913158     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19931492     Document Type: Article

References (8)

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