DC and RF characteristics of double recessed and double pulse doped AlInAs/GaInAs/InP HEMTs

Electronics Letters

Volumn 31, Issue 2, 1995, Pages 135-136

  Hur, K Y ^a   McTaggart, R A ^a   Miller, A B ^a   Hoke, W E ^a   Lemonias, P J ^a   Aucoin, L M ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

devices; High electron mobility transistors; Semiconductor

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

ALUMINUM INDIUM ARSENIDE; GALLIUM INDIUM ARSENIDE; GATE RECESS ETCH PROFILES; ON WAFER CHARACTERIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029207845     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950063     Document Type: Article

References (12)

1. MISHRA, U.K., BROWN, A.S., ROSENBAUM, S.E., HOOPER, C.E., PIERCE, M.W., DELANEY, M.J., VAUGHN, S., and WHITE, K.: ‘Microwave performance of AlInAs-GalnAs HEMTs with 0.2- and 0.1-µm gate length’, IEEE Electron Device Lett., 1988, 9, (12), pp. 647-649
2. HO, P., CHAO, P.C., DUH, K.H.G., JABRA, A.A., BALLINGALL, J.M., and SMITH, P.M.: ‘Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxy’. IEEE IEDM Tech. Dig., 1988, pp. 184-186
3. NGUYEN, L.D., BROWN, A.S., THOMPSON, M.A., JELLOIAN, L.M., LARSON, L.E., AND MATLOUBIAN, M.: 650Â self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0. 20In0.80As high electron mobility transistors’, IEEE Electron Device Lett., 1992, 13, (3), pp. 143-145
4. FUJITA, S., NADA, T., NOZAKI, C., AND ASHIZAWA, Y.: ‘InGaAs/InAlAs HEMT with strained InGaP Schottky contact layer’, IEEE Electron Device Lett., 1993, 14, (5), pp. 259-261
5. CHOUGH, K.B., CANEAU, C., HONG, W.-P., and SONG, J.I.: ‘Al0.25In0.75P/Al0.48In0.52As/Ga0.35In0.65As graded channel pseudomorphic HEMTs with high channel breakdown voltage’, IEEE Electron Device Lett., 1994, 15, (1), pp. 33-35
6. JELLOIAN, L.M., MATLOUBIAN, M-, LIU, T„ LUI, M., and Thompson, M.A.: ‘InP-based HEMTs with Al0.4Sln0.52AsXP1-X. Schottky layers’, IEEE Electron Device Lett., 1994, 15, (5), pp. 172-174
7. HUANG, J.C., ATWOOD, D., SALEDAS, P., and WEICHERT, C.: ‘A comparison of single-versus double-recessed PHEMTs designed for microwave and millimeter-wave applications’. 1992 Int. Electronic Materials and Devices Symp., Taipei, Taiwan
8. HUANG, J.C., SALEDAS, P., WENDLER, J., PLATZKER, A., BOULAIS, W., SHANFIELD, S., HOKE, W., LYMAN, P., AUCOIN, L., MIQUELARENA, A., BEDARD, C., and ATWOOD, D.: ‘A double recessed Al0.24GaAs/In0.16GaAs pseudomorphic HEMT for Ka- and Q-band power applications’, IEEE Electron Device Lett., 1993, 14, (9), pp. 456-458
9. SHANFIELD, S., PLATZKER, A., AUCOIN, L., KAZIOR, T., PATEL, B.I., BERTRAND, A., HOKE, W., AND LYMAN, P.: ‘One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching’. IEEE MTT-S Dig., 1992, pp. 639-641
10. BOOS, J.B., AND KRUPPA, W.: ‘InAlAs/lnGaAs/lnP HEMTs with high breakdown voltages using double recess gate process’, Electron. Lett., 1991, 27, (21), pp. 1909-1910
11. MCTAGGART, R.A., HUR, K.Y., LEMONIAS, P.J„ HOKE, W.E., and AUCOIN, L.M.: ‘Thermally stable AuGe-Au ohmic contacts for single doped InP HEMT structures’, submitted to J. Vacuum Sci. Technol.
12. HUGHES, B., AND TASKER, P.J.: ‘Bias dependence of the MODFET intrinsic model element values at microwave frequencies’, IEEE Trans. Electron Devices, 1989, 36, (10), pp. 2267-2273