2S/mm transconductance InAs-inserted-channel modulation doped field effect transistors with a very close gate-to-channel separation of 14.5 nm

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 4 B, 1997, Pages

  Xu, Dong ^a   Heiss, Heiner ^a   Sexl, Markus ^a   Kraus, Stefan ^a   Boehm, Gerhard ^a   Traenkle, Guenther ^a   Weimann, Guenter ^a   Abstreiter, Gerhard ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

GATE TO CHANNEL SEPARATION; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFETS); SURFACE POTENTIAL;

FIELD EFFECT TRANSISTORS;

EID: 0031122480     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l470     Document Type: Article

References (3)