High-frequency performance for sub-0·1 µm gate InAs-inserted-channel InAIAs/InGaAs HEMT

Electronics Letters

Volumn 28, Issue 13, 1992, Pages 1230-1231

  Akazaki, T ^a   Enoki, T ^a   Arai, K ^a   Umeda, Y ^a   Ishii, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Microwave devices and components

Indexed keywords

SEMICONDUCTING INDIUM COMPOUNDS;

HEMT; TRANSCONDUCTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0026877379     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19920776     Document Type: Article

References (4)

1. Mishra, U. K., Brown, A. S., Jelloian, L. M., Thompson, M., Nguyen, L. D., and Rosenbaum, S. E.: ‘Novel high performance self-aligned 0·15 micron long T-gate AlInAs-GalnAs HEMTs’, IEDM Tech. Dig. Lett., 1989, pp. 101–104
2. Chao, P. C., Tessmer, A. J., Duh, K.-H.G., Ho, P. Kao, M.-Y., Smith, P. M., Ballingall, J. M., Liu, S.-M., and Jabra, A. A.: ‘W-band lownoise InAlAs-InGaAs lattice-matched HEMT’s’, IEEE Electron Device Lett., 1990, 11, pp. 59–62
3. Enoki, T., Arai, K., and Ishii, Y.: ‘Delay time analysis for 0·4- to 5-µm-gate InAlAs/InGaAs HEMT’s’, IEEE Electron Device Lett., 1990, 11, pp. 502–504
4. Akazaki, T., Arai, K., Enoki, T., and Ishii, Y.: ‘Improved InAlAs/ InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel’, IEEE Electron Device Lett., 1992