Comparison of 80–200 nm Gate Length Al0.25GaAs/GaAs/(GaAs:AlAs), Al0.3GaAs/In0.15GaAs/GaAs, and In0.52AlAs/In0.65GaAs/InP HEMT's

IEEE Transactions on Electron Devices

Volumn 42, Issue 12, 1995, Pages 2047-2055

  Thayne, Iain G ^a   Holland, Martin C ^a   Davies, John H ^b   Beaumont, Steven P ^b   Jensen, Geir U ^d   Paulsen, André ^c   Chen, Yaochung ^c   Li, Weigi ^d   Bhattacharya, Pallab K ^d  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b 2007 ^*  (Norway)

^c UNIVERSITY OF MICHIGAN   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

EFFECTIVE ELECTRON VELOCITY; GATE LENGTH; SUPERLATTICE BUFFER QUANTUM WELL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029545786     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.477760     Document Type: Article

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