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Volumn , Issue , 1991, Pages 371-376
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T-gate process and delay time analysis for sub-1/4-μm-gate InAlAs/InGaAs HEMT's
a a a
a
NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON BEAMS;
SEMICONDUCTING INDIUM COMPOUNDS;
T-GATE PROCESS;
TRANSISTORS, HIGH ELECTRON MOBILITY;
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EID: 0026404066
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (10)
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References (9)
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