Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels

IEEE Transactions on Electron Devices

Volumn 43, Issue 8, 1996, Pages 1256-1263

  Rinaldi, Niccolö F ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

BAND GAP NARROWING EFFECTS; BASE SHEET RESISTANCE; BASE TRANSIT TIME; COLLECTOR CURRENT DENSITY; MINORITY CARRIER TRANSPORT;

BIPOLAR TRANSISTORS;

EID: 0030215450     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.506777     Document Type: Article

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