New Formulation of the Current and Charge Relations in Bipolar Transistor Modeling for CACD Purposes

IEEE Transactions on Electron Devices

Volumn 32, Issue 11, 1985, Pages 2415-2419

  De Graaff, H C ^a   Kloosterman, W J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS - COMPUTER AIDED DESIGN;

CURRENT/CHARGE RELATIONS; VERTICAL BIPOLAR TRANSISTOR;

TRANSISTORS, BIPOLAR;

EID: 0022152069     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22288     Document Type: Article

References (9)

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3. J. L. Moll and I. M. Ross, “The dependence of transistor parameters on the distribution of base layer resistivity,” Proc. IRE, vol. 44, pp. 72–78, Jan. 1956.
4. R. Beaufroy and J. J. Sparkes, “The junction transistor as a charge-controlled controlled device,” Automat. Tel. Eng. J., vol. 13, pp. 310–327, Oct. 1957.
5. I. Getreu, Modeling the Bipolar Transistor. Amsterdam: Elsevier, 1978, pp. 33–38.
6. H. K. Gummel, “A charge control relation for bipolar transistors,” Bell Syst. Tech. J., pp. 115–120, Jan. 1970.
7. J. Lindmayer and C. Y. Wrigley, “The high-injection level operation of drift transistors,” Solid-State Electron., vol. 2, pp. 79–84, 1961.
8. H. C. de Graaff, “High current density effects in the collector of bipolar transistors,” in Process and Device Modeling for Integrated Circuits, F. van de Wiele, W. L. Engl, and P. G. Jespers, Eds. Leyden: Noord-hoff, 1977, pp. 419–42.
9. G. M. Kull, L. W. Nagel, S. W. Lee, E. J. Prendergast, P. Lloyd, and H. K. Dirks, “A unified bipolar device model,” in IEDM Tech. Dig., pp. 75–78, Dec. 1983.