-
1
-
-
36149012552
-
Deformation potentials and mobilities in non-polar crystals
-
J. Bardeen and W. Shockley, “Deformation potentials and mobilities in non-polar crystals,” Phys. Rev., vol. 80, p. 72, 1950.
-
(1950)
Phys. Rev.
, vol.80
, pp. 72
-
-
Bardeen, J.1
Shockley, W.2
-
2
-
-
0000291341
-
Quasi-electric and quasi-magnetic fields in nonuniform semiconductors
-
H. Kroemer, “Quasi-electric and quasi-magnetic fields in nonuniform semiconductors,” RCA Rev., vol. 18, p. 332, 1957.
-
(1957)
RCA Rev.
, vol.18
, pp. 332
-
-
Kroemer, H.1
-
3
-
-
0039505543
-
Generation of an emf in semiconductors with nonequilibrium equilibrium current carrier concentration
-
July
-
J. Tauc, “Generation of an emf in semiconductors with nonequilibrium equilibrium current carrier concentration,” Rev. Mod. Phys., vol. 29, pp. 308–324, July 1957.
-
(1957)
Rev. Mod. Phys.
, vol.29
, pp. 308-324
-
-
Tauc, J.1
-
4
-
-
0001630986
-
Electrical conduction and the photovoltaic effect in semiconductors with position-dependent band gap
-
P. R. Emtage, “Electrical conduction and the photovoltaic effect in semiconductors with position-dependent band gap,” J. Appl. Phys., vol. 33, p. 1950, 1962.
-
(1962)
J. Appl. Phys.
, vol.33
, pp. 1950
-
-
Emtage, P.R.1
-
5
-
-
0037867959
-
n − n semiconductor heterojunctions
-
W. G. Oldham and A. G. Milnes, “n − n semiconductor heterojunctions,” Solid-State Electron., vol. 6, p. 121, 1963.
-
(1963)
Solid-State Electron.
, vol.6
, pp. 121
-
-
Oldham, W.G.1
Milnes, A.G.2
-
6
-
-
0014363866
-
Transport of photocarriers in Cdx Hg1−x Te graded-gap structures
-
G. Cohen-Solal and Y. Marfaing, “Transport of photocarriers in Cdx Hg1−x Te graded-gap structures,” Solid-State Electron., vol. 11, p. 1131, 1968.
-
(1968)
Solid-State Electron.
, vol.11
, pp. 1131
-
-
Cohen-Solal, G.1
Marfaing, Y.2
-
7
-
-
0015107864
-
Photovoltaic effect in graded bandgap structures
-
Aug.
-
Y. Marfaing and J. Chevallier, “Photovoltaic effect in graded bandgap structures,” IEEE Trans. Electron Devices, vol. ED-18, pp. 465–471, Aug. 1971.
-
(1971)
IEEE Trans. Electron Devices
, vol.ED-18
, pp. 465-471
-
-
Marfaing, Y.1
Chevallier, J.2
-
8
-
-
84938006654
-
Theory of a wide-gap emitter for transistors
-
H. Kroemer, “Theory of a wide-gap emitter for transistors,” Proc. IRE, vol. 45, p. 1535, 1957.
-
(1957)
Proc. IRE
, vol.45
, pp. 1535
-
-
Kroemer, H.1
-
9
-
-
49949143737
-
The operation of graded band gap base transistors at high currents
-
D. D. Martin and R. Stratton, “The operation of graded band gap base transistors at high currents,” Solid-State Electron., vol. 9, p. 237, 1966.
-
(1966)
Solid-State Electron.
, vol.9
, pp. 237
-
-
Martin, D.D.1
Stratton, R.2
-
10
-
-
0000114183
-
Broadening of impurity bands in heavily doped semiconductors
-
T. N. Morgan, “Broadening of impurity bands in heavily doped semiconductors,” Phys. Rev., vol. 139, pp. A343–348, 1965.
-
(1965)
Phys. Rev.
, vol.139
, pp. A343-A348
-
-
Morgan, T.N.1
-
11
-
-
0003019646
-
Thomas-Fermi approach to impure semiconductor band structure
-
E. O. Kane, “Thomas-Fermi approach to impure semiconductor band structure,” Phys. Rev., vol. 131, pp. 79–88, 1963.
-
(1963)
Phys. Rev.
, vol.131
, pp. 79-88
-
-
Kane, E.O.1
-
13
-
-
36049058901
-
Impurity-band tails in the high-density density limit. I. Minimum counting methods
-
B. I. Halperin and M. Lax, “Impurity-band tails in the high-density density limit. I. Minimum counting methods,” Phys. Rev., vol. 144, p. 722, 1966.
-
(1966)
Phys. Rev.
, vol.144
, pp. 722
-
-
Halperin, B.I.1
Lax, M.2
-
14
-
-
0001682973
-
Theory of the band structure of very degenerate semiconductors
-
P. A. Wolff, “Theory of the band structure of very degenerate semiconductors,” Phys. Rev., vol. 126, pp. 405–412, 1962.
-
(1962)
Phys. Rev.
, vol.126
, pp. 405-412
-
-
Wolff, P.A.1
-
15
-
-
0012954011
-
Description of impurity ionization in semiconductors by chemical thermodynamics
-
W. W. Harvey, “Description of impurity ionization in semiconductors by chemical thermodynamics,” Phys. Rev., vol. 123, pp. 1666–1673, 1961.
-
(1961)
Phys. Rev.
, vol.123
, pp. 1666-1673
-
-
Harvey, W.W.1
-
16
-
-
0004834872
-
Conductivity and Hall effect in the intrinsic range of germanium
-
June
-
F. J. Morin and J. P. Maita, “Conductivity and Hall effect in the intrinsic range of germanium,” Phys. Rev., vol. 94, pp. 1525–1529, June 1954.
-
(1954)
Phys. Rev.
, vol.94
, pp. 1525-1529
-
-
Morin, F.J.1
Maita, J.P.2
-
17
-
-
84919032582
-
-
R. A. Abrams, G. J. Rees, and B. L. H. Wilson, Adv. Phys., vol. 27, pp. 799–892, 1978.
-
(1978)
Adv. Phys.
, vol.27
, pp. 799-892
-
-
Abrams, R.A.1
Rees, G.J.2
Wilson, B.L.H.3
-
18
-
-
0010584131
-
The temperature dependence of ideal current gain in double diffused silicon transistors
-
W. L. Kaufmann and A. A. Bergh, “The temperature dependence of ideal current gain in double diffused silicon transistors,” IEEE Trans. Electron Devices, vol. ED-15, pp. 732–735, 1968.
-
(1968)
IEEE Trans. Electron Devices
, vol.ED-15
, pp. 732-735
-
-
Kaufmann, W.L.1
Bergh, A.A.2
-
19
-
-
84938021969
-
Investigation of current-gain temperature dependence in silicon transistors
-
D. Buhanan, “Investigation of current-gain temperature dependence in silicon transistors,” IEEE Trans. Electron Devices, vol. ED-16, pp. 117–124, 1969.
-
(1969)
IEEE Trans. Electron Devices
, vol.ED-16
, pp. 117-124
-
-
Buhanan, D.1
-
21
-
-
0015143255
-
The influence of heavy doping on the emitter efficiency of a bipolar transistor
-
H. J. J. DeMan, “The influence of heavy doping on the emitter efficiency of a bipolar transistor,” IEEE Trans. Electron Devices, vol. ED-18, pp. 833–835, 1971.
-
(1971)
IEEE Trans. Electron Devices
, vol.ED-18
, pp. 833-835
-
-
DeMan, H.J.J.1
-
22
-
-
36149008418
-
Solubility of flaws in heavily-doped doped semiconductors
-
W. Shockley and J. L. Moll, “Solubility of flaws in heavily-doped doped semiconductors,” Phys. Rev., vol. 119, p. 1480, 1960.
-
(1960)
Phys. Rev.
, vol.119
, pp. 1480
-
-
Shockley, W.1
Moll, J.L.2
-
23
-
-
0343993745
-
Distribution and precipitation of gold in phosphorous-diffused silicon
-
M. L. Joshi and S. Dash, “Distribution and precipitation of gold in phosphorous-diffused silicon,” J. Appl. Phys., vol. 37, pp. 2453–2457, 1966.
-
(1966)
J. Appl. Phys.
, vol.37
, pp. 2453-2457
-
-
Joshi, M.L.1
Dash, S.2
-
25
-
-
0016049707
-
Excess vacancy generation mechanism at phosphorous diffusion into silicon
-
M. Yoshida, E. Arai, H. Nakamura, and Y. Tterunuma, “Excess vacancy generation mechanism at phosphorous diffusion into silicon,” J. Appl. Phys., vol. 45, p. 1498, 1974.
-
(1974)
J. Appl. Phys.
, vol.45
, pp. 1498
-
-
Yoshida, M.1
Arai, E.2
Nakamura, H.3
Tterunuma, Y.4
-
26
-
-
0015602079
-
Transport equations in heavily doped silicon
-
R. J. Van Overstraeten, H. J. DeMan, and R. P. Mertens, “Transport equations in heavily doped silicon,” IEEE Trans. Electron Devices, vol. ED-20, pp. 290–298, 1973.
-
(1973)
IEEE Trans. Electron Devices
, vol.ED-20
, pp. 290-298
-
-
Van Overstraeten, R.J.1
DeMan, H.J.2
Mertens, R.P.3
-
27
-
-
0017481552
-
Carrier generation, recombination, trapping, and transport in semiconductors with position dependent composition
-
Apr.
-
C. T. Sah and F. A. Lindholm, “Carrier generation, recombination, trapping, and transport in semiconductors with position dependent composition,” IEEE Trans. Electron Devices, vol. ED-24, pp. 358–362, Apr. 1977.
-
(1977)
IEEE Trans. Electron Devices
, vol.ED-24
, pp. 358-362
-
-
Sah, C.T.1
Lindholm, F.A.2
-
28
-
-
0017482945
-
A computer analysis of heterojunction and graded composition solar cells
-
J. E. Sutherland and J. R. Hauser, “A computer analysis of heterojunction and graded composition solar cells,” IEEE Trans. Electron Devices, vol. ED-24, p. 363, 1977.
-
(1977)
IEEE Trans. Electron Devices
, vol.ED-24
, pp. 363
-
-
Sutherland, J.E.1
Hauser, J.R.2
-
29
-
-
0017513097
-
Current in semiconductors with position-dependent band gap and electron affinity
-
A. H. Marshak and K. M. van Vliet, “Current in semiconductors with position-dependent band gap and electron affinity,” Phys. Status Solidi (a), vol. 42, p. 279, 1977.
-
(1977)
Phys. Status Solidi (a)
, vol.42
, pp. 279
-
-
Marshak, A.H.1
van Vliet, K.M.2
-
30
-
-
0017930767
-
Electrical current in solids with position-dependent band structure
-
—, “Electrical current in solids with position-dependent band structure,” Solid-State Electron., vol. 21, pp. 417–427, 1978.
-
(1978)
Solid-State Electron.
, vol.21
, pp. 417-427
-
-
Marshak, A.H.1
van Vliet, K.M.2
-
31
-
-
0017933075
-
Carrier densities and emitter efficiency in degenerate materials with position-dependent band structure
-
—, “Carrier densities and emitter efficiency in degenerate materials with position-dependent band structure,” Solid-State Electron., vol. 21, pp. 429–434, 1978.
-
(1978)
Solid-State Electron.
, vol.21
, pp. 429-434
-
-
Marshak, A.H.1
van Vliet, K.M.2
-
33
-
-
0019143476
-
On the separation of quasi-Fermi levels and the boundary conditions for junction devices
-
A. H. Marshak and K. M. van Vliet, “On the separation of quasi-Fermi levels and the boundary conditions for junction devices,” Solid-State Electron., vol. 23, pp. 1223–1228, 1980.
-
(1980)
Solid-State Electron.
, vol.23
, pp. 1223-1228
-
-
Marshak, A.H.1
van Vliet, K.M.2
-
34
-
-
0017244588
-
Conduction current and generalized Einstein relations for degenerate semiconductors and metals
-
K. M. van Vliet and A. H. Marshak, “Conduction current and generalized Einstein relations for degenerate semiconductors and metals,” Phys. Status Solidi (b), vol. 78, p. 501, 1976.
-
(1976)
Phys. Status Solidi (b)
, vol.78
, pp. 501
-
-
van Vliet, K.M.1
Marshak, A.H.2
-
35
-
-
0017488005
-
Two formulations of semi-conductor transport equations
-
P. T. Landsberg and S. A. Hope, “Two formulations of semi-conductor transport equations,” Solid-State Electron., vol. 20, p. 421, 1977.
-
(1977)
Solid-State Electron.
, vol.20
, pp. 421
-
-
Landsberg, P.T.1
Hope, S.A.2
-
36
-
-
36149009855
-
The structure of electronic excitation levels in insulating crystals
-
G. H. Wannier, “The structure of electronic excitation levels in insulating crystals,” Phys. Rev., vol. 52, p. 191, 1937.
-
(1937)
Phys. Rev.
, vol.52
, pp. 191
-
-
Wannier, G.H.1
-
37
-
-
0000974354
-
Wannier-Slater theorem for solids with nonuniform band structure
-
K. M. van Vliet and A. H. Marshak, “Wannier-Slater theorem for solids with nonuniform band structure,” Phys. Rev. B, vol. 26, pp. 6734–6738, 1982.
-
(1982)
Phys. Rev. B
, vol.26
, pp. 6734-6738
-
-
van Vliet, K.M.1
Marshak, A.H.2
-
39
-
-
0001590784
-
Simple band model for amorphous semiconducting alloys
-
M. H. Cohen, H. Fritzsche, and S. R. Ovshinsky, “Simple band model for amorphous semiconducting alloys,” Phys. Rev. Lett., vol. 22, p. 1065, 1969.
-
(1969)
Phys. Rev. Lett.
, vol.22
, pp. 1065
-
-
Cohen, M.H.1
Fritzsche, H.2
Ovshinsky, S.R.3
-
40
-
-
84983886626
-
The effective density of states in the conduction and valence bands for arbitrary band structure
-
K. M. van Vliet and A. H. Marshak, “The effective density of states in the conduction and valence bands for arbitrary band structure,” Phys. Status Solidi (b), vol. 101, pp. 525–530, 1980.
-
(1980)
Phys. Status Solidi (b)
, vol.101
, pp. 525-530
-
-
van Vliet, K.M.1
Marshak, A.H.2
-
41
-
-
0019546871
-
Rigid band analysis of heavily doped semiconductor devices
-
A. H. Marshak, M. A. Shibib, J. G. Fossum, and F. A. Lindholm, “Rigid band analysis of heavily doped semiconductor devices,” IEEE Trans. Electron Devices, vol. ED-28, pp. 293–298, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 293-298
-
-
Marshak, A.H.1
Shibib, M.A.2
Fossum, J.G.3
Lindholm, F.A.4
-
42
-
-
0020206154
-
Approximations for Fermi-Dirac integrals, especially the function F1/2 (η) used to describe electron density in a semiconductor
-
J. S. Blakemore, “Approximations for Fermi-Dirac integrals, especially the function F1/2 (η) used to describe electron density in a semiconductor,” Solid-State Electron., vol. 25, pp. 1067–1076, 1982.
-
(1982)
Solid-State Electron.
, vol.25
, pp. 1067-1076
-
-
Blakemore, J.S.1
-
43
-
-
0000495511
-
Interband magneto-optical absorption in gallium arsenide
-
Q. H. F. Vrehen, “Interband magneto-optical absorption in gallium arsenide,” J. Phys. Chem. Solids, vol. 29, p. 129, 1968.
-
(1968)
J. Phys. Chem. Solids
, vol.29
, pp. 129
-
-
Vrehen, Q.H.F.1
-
44
-
-
0019392705
-
Heavy doping effects in silicon
-
L. Marton and C. Marton, Eds., New York: Academic Press
-
R. P. Mertens, R. J. Van Overstraeten, and H. J. DeMan, “Heavy doping effects in silicon,” in Advances in Electronics and Electron Physics, L. Marton and C. Marton, Eds., vol. 55. New York: Academic Press, 1981, pp. 77–118.
-
(1981)
Advances in Electronics and Electron Physics
, vol.55
, pp. 77-118
-
-
Mertens, R.P.1
Van Overstraeten, R.J.2
DeMan, H.J.3
-
45
-
-
5844411337
-
Impurity concentration dependence of the density of states in semiconductors
-
D. D. Kleppinger and F. A. Lindholm, “Impurity concentration dependence of the density of states in semiconductors,” Solid-State Electron., vol. 14, p. 199, 1971.
-
(1971)
Solid-State Electron.
, vol.14
, pp. 199
-
-
Kleppinger, D.D.1
Lindholm, F.A.2
-
46
-
-
0015067896
-
Impurity concentration dependent density of states and resulting Fermi Level for silicon
-
—, “Impurity concentration dependent density of states and resulting Fermi Level for silicon,” Solid-State Electron., vol. 14, pp. 407–416, 1971.
-
(1971)
Solid-State Electron.
, vol.14
, pp. 407-416
-
-
Kleppinger, D.D.1
Lindholm, F.A.2
-
47
-
-
0015683137
-
Transport equations in heavily doped silicon, and the current gain of a bipolar transistor
-
M. S. Mock, “Transport equations in heavily doped silicon, and the current gain of a bipolar transistor,” Solid-State Electron., vol. 16, pp. 1251–1259, 1973.
-
(1973)
Solid-State Electron.
, vol.16
, pp. 1251-1259
-
-
Mock, M.S.1
-
48
-
-
49449125417
-
The emitter efficiency of silicon transistors
-
B. L. H. Wilson, “The emitter efficiency of silicon transistors,” Solid-State Electron., vol. 20, pp. 71–74, 1977.
-
(1977)
Solid-State Electron.
, vol.20
, pp. 71-74
-
-
Wilson, B.L.H.1
-
49
-
-
0343336454
-
The effect of electron interaction on the band gap of extrinsic semiconductors
-
Also see P. A. Stern and J. C. Inkson, Comment on Energy gap in Si and Ge: impurity dependence, J. Appl. Phys., vol. 52, pp. 6432–6433, Oct. 1981.
-
J. C. Inkson, “The effect of electron interaction on the band gap of extrinsic semiconductors,” J. Phys. C. Solid-State Phys., vol. 9, pp. 117–1183, 1976. Also see P. A. Stern and J. C. Inkson, “Comment on ‘Energy gap in Si and Ge: impurity dependence’,” J. Appl. Phys., vol. 52, pp. 6432–6433, Oct. 1981.
-
(1976)
J. Phys. C. Solid-State Phys.
, vol.9
, pp. 117-1183
-
-
Inkson, J.C.1
-
50
-
-
0018491470
-
Bandgap narrowing in moderately to heavily doped silicon
-
H. P. D. Lanyon and R. A. Tuft, “Bandgap narrowing in moderately to heavily doped silicon,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1014–1018, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1014-1018
-
-
Lanyon, H.P.D.1
Tuft, R.A.2
-
51
-
-
0019016773
-
Energy gap in Si and Ge: Impurity dependence
-
May
-
G. D. Mahan, “Energy gap in Si and Ge: Impurity dependence,” J. Appl. Phys., vol. 51, pp. 2634–2649, May 1980.
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 2634-2649
-
-
Mahan, G.D.1
-
52
-
-
0001371339
-
Band-gap narrowing in heavily doped many-valley semiconductors
-
Aug
-
K.-F. Berggren and B. E. Sernelius, “Band-gap narrowing in heavily doped many-valley semiconductors, Phys. Rev. B, vol. 24, pp. 1971–1986, Aug 1981.
-
(1981)
Phys. Rev. B
, vol.24
, pp. 1971-1986
-
-
Berggren, K.F.1
Sernelius, B.E.2
-
53
-
-
0019900516
-
Effect of donor impurities on the conduction and valence bands of silicon
-
Jan.
-
J. R. Lowney and H. S. Bennett, “Effect of donor impurities on the conduction and valence bands of silicon,” J. Appl. Phys., vol. 53, pp. 433–438, Jan. 1982.
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 433-438
-
-
Lowney, J.R.1
Bennett, H.S.2
-
54
-
-
0017951419
-
Characteristics of the distribution of the density of states in heavily doped silicon
-
K. P. Abdurakmanov, S. H. Mirakhmedov, and A. T. Teshabaev, “Characteristics of the distribution of the density of states in heavily doped silicon,” Soy. Phys.—Semicond., vol. 12, pp. 457–459, 1978.
-
(1978)
Soy. Phys.—Semicond.
, vol.12
, pp. 457-459
-
-
Abdurakmanov, K.P.1
Mirakhmedov, S.H.2
Teshabaev, A.T.3
-
55
-
-
0000302768
-
Nuclear magnetic resonance studies of the metallic transitions in doped silicon
-
R. K. Sundfors and D. F. Holcomb, “Nuclear magnetic resonance studies of the metallic transitions in doped silicon,” Phys. Rev., vol. 136A, pp. 810–820, 1964.
-
(1964)
Phys. Rev.
, vol.136 A
, pp. 810-820
-
-
Sundfors, R.K.1
Holcomb, D.F.2
-
56
-
-
0001519718
-
Semiconductor-to-metal transition in n-type group IV semiconductors
-
M. N. Alexander and D. F. Holcomb, “Semiconductor-to-metal transition in n-type group IV semiconductors,” Rev. Mod. Phys., vol. 40, p. 815, 1968.
-
(1968)
Rev. Mod. Phys.
, vol.40
, pp. 815
-
-
Alexander, M.N.1
Holcomb, D.F.2
-
57
-
-
0017542371
-
Specific heat study of heavily p doped Si
-
N. Kobayashi, S. Ikehata, S. Kobayashi, and W. Sasaki, “Specific heat study of heavily p doped Si,” Solid-State Commun., vol. 24, p. 67, 1977.
-
(1977)
Solid-State Commun.
, vol.24
, pp. 67
-
-
Kobayashi, N.1
Ikehata, S.2
Kobayashi, S.3
Sasaki, W.4
-
59
-
-
0018951248
-
The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform composition
-
—, “The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform composition,” Solid-State Electron., vol. 23, pp. 49–53, 1980.
-
(1980)
Solid-State Electron.
, vol.23
, pp. 49-53
-
-
van Vliet, K.M.1
Marshak, A.H.2
-
60
-
-
0019544925
-
Transport equations for the analysis of heavily doped semiconductor devices
-
M. S. Lundstrom, R. J. Schwartz, and J. L. Gray, “Transport equations for the analysis of heavily doped semiconductor devices,” Solid-State Electron., vol. 24, pp. 195–202, 1981.
-
(1981)
Solid-State Electron.
, vol.24
, pp. 195-202
-
-
Lundstrom, M.S.1
Schwartz, R.J.2
Gray, J.L.3
-
61
-
-
84939753062
-
Transport in devices with nonuniform band structure including devices with band gap narrowing due to heavy doping
-
(Delhi, India), Nov.
-
C. M. Van Vliet and A. H. Marshak, “Transport in devices with nonuniform band structure including devices with band gap narrowing due to heavy doping,” in Proc. Int. Workshop on Solid State Devices (Delhi, India), Nov. 1981.
-
(1981)
Proc. Int. Workshop on Solid State Devices
-
-
Van Vliet, C.M.1
Marshak, A.H.2
-
62
-
-
0020180840
-
Numerical analysis of heterostructure semiconductor devices
-
M. S. Lundstrom and R. J. Schuelke, “Numerical analysis of heterostructure semiconductor devices,” IEEE Trans. Electron Devices, vol. ED-30, p. 1151, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1151
-
-
Lundstrom, M.S.1
Schuelke, R.J.2
-
63
-
-
0018547329
-
One-dimensional device model of the npn bipolar transistor including heavy doping effects under Fermi Statics
-
A. Nakagawa, “One-dimensional device model of the npn bipolar transistor including heavy doping effects under Fermi Statics,” Solid-State Electron., vol. 22, pp. 943–949, 1979.
-
(1979)
Solid-State Electron.
, vol.22
, pp. 943-949
-
-
Nakagawa, A.1
-
64
-
-
84885538353
-
On the diffusion theory of rectification
-
P. T. Landsberg, “On the diffusion theory of rectification,” Proc. Roy. Soc. Ser. A, vol. 213, pp. 226–237, 1952.
-
(1952)
Proc. Roy. Soc. Ser. A
, vol.213
, pp. 226-237
-
-
Landsberg, P.T.1
-
65
-
-
84937998390
-
Alternative formulation of generalized Einstein relation for degenerate semiconductors
-
S. S. Li and F. A. Lindholm, “Alternative formulation of generalized Einstein relation for degenerate semiconductors,” Proc. IEEE, vol. 56, pp. 1256–1257, 1988.
-
(1988)
Proc. IEEE
, vol.56
, pp. 1256-1257
-
-
Li, S.S.1
Lindholm, F.A.2
-
66
-
-
33645066679
-
Minority carrier injection into heavily doped silicon
-
J. W. Slotboom, “Minority carrier injection into heavily doped silicon,” Solid-State Electron., vol. 20, pp. 167–170, 1977.
-
(1977)
Solid-State Electron.
, vol.20
, pp. 167-170
-
-
Slotboom, J.W.1
-
67
-
-
0017497060
-
The emitter efficiency of bipolar transistors
-
H. C. de Graaff, J. W. Slotboom, and A. Schmitz, “The emitter efficiency of bipolar transistors,” Solid-State Electron., vol. 20, pp. 515–521, 1977.
-
(1977)
Solid-State Electron.
, vol.20
, pp. 515-521
-
-
de Graaff, H.C.1
Slotboom, J.W.2
Schmitz, A.3
-
68
-
-
0019033950
-
A new solution for minority-carrier injection into the emitter of a bipolar transistor
-
R. Amantea, “A new solution for minority-carrier injection into the emitter of a bipolar transistor,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1231–1238, 1980.
-
(1980)
IEEE Trans. Electron Devices
, vol.ED-27
, pp. 1231-1238
-
-
Amantea, R.1
-
69
-
-
0019608018
-
An analytic model for minority-carrier transport in heavily doped regions of silicon devices
-
J. G. Fossum and M. A. Shibib, “An analytic model for minority-carrier transport in heavily doped regions of silicon devices,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1018–1025, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 1018-1025
-
-
Fossum, J.G.1
Shibib, M.A.2
-
70
-
-
33744675217
-
On the deionization of impurities as an explanation for excess intrinsic carrier density in heavily doped silicon
-
M. A. Shibib and F. A. Lindholm, “On the deionization of impurities as an explanation for excess intrinsic carrier density in heavily doped silicon,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1304–1306, 1980.
-
(1980)
IEEE Trans. Electron Devices
, vol.ED-27
, pp. 1304-1306
-
-
Shibib, M.A.1
Lindholm, F.A.2
-
71
-
-
0018482035
-
Law of the junction for degenerate material with position-dependent band gap and electron affinity
-
A. H. Marshak and R. Shrivastava, “Law of the junction for degenerate material with position-dependent band gap and electron affinity,” Solid-State Electron., vol. 22, pp. 567–571, 1979.
-
(1979)
Solid-State Electron.
, vol.22
, pp. 567-571
-
-
Marshak, A.H.1
Shrivastava, R.2
-
72
-
-
0018479757
-
Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors
-
June
-
M. A. Shibib, F. A. Lindholm, and F. Therez, “Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors,” IEEE Trans. Electron Devices, vol. ED-26, pp. 959–965, June 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 959-965
-
-
Shibib, M.A.1
Lindholm, F.A.2
Therez, F.3
-
73
-
-
84916373780
-
Effects of electrons and holes on the transition layer characteristics of linearly graded p-n junction
-
C.-T. Sah, “Effects of electrons and holes on the transition layer characteristics of linearly graded p-n junction,” Proc. IRE, vol. 49, pp. 603–618, 1961.
-
(1961)
Proc. IRE
, vol.49
, pp. 603-618
-
-
Sah, C.T.1
-
74
-
-
0015659684
-
Calculation of the emitter efficiency of bipolar transistors
-
R. P. Mertens, H. J. deMan, and R. J. Van Overstraeten, “Calculation of the emitter efficiency of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-20, pp. 772–778, 1973.
-
(1973)
IEEE Trans. Electron Devices
, vol.ED-20
, pp. 772-778
-
-
Mertens, R.P.1
deMan, H.J.2
Van Overstraeten, R.J.3
-
75
-
-
0016072230
-
Polarizabilities of shallow donors in silicon
-
J. Bethin, T. G. Castner, and N. K. Lee, “Polarizabilities of shallow donors in silicon,” Solid-State Commun., vol. 14, p. 1321, 1974.
-
(1974)
Solid-State Commun.
, vol.14
, pp. 1321
-
-
Bethin, J.1
Castner, T.G.2
Lee, N.K.3
-
76
-
-
0019634836
-
The effect of position-dependent dielectric constant on the electric field and charge density in a p-n junction
-
M. H. Andrews, A. H. Marshak, and R. Shrivastava, “The effect of position-dependent dielectric constant on the electric field and charge density in a p-n junction,” J. Appl. Phys., vol. 52, p. 6783, 1981.
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 6783
-
-
Andrews, M.H.1
Marshak, A.H.2
Shrivastava, R.3
-
77
-
-
4243717050
-
Dielectric anomaly and the metal-insulator transition in n-type type silicon
-
T. G. Castner, N. K. Lee, G. S. Cieloszyk, and G. L. Solinger, “Dielectric anomaly and the metal-insulator transition in n-type type silicon,” Phys. Rev. Lett., vol. 34, p. 1627, 1975.
-
(1975)
Phys. Rev. Lett.
, vol.34
, pp. 1627
-
-
Castner, T.G.1
Lee, N.K.2
Cieloszyk, G.S.3
Solinger, G.L.4
-
78
-
-
36749104810
-
Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation
-
Jan.
-
A. Neugroschel and F. A. Lindholm, “Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation,” Appl. Phys. Lett., vol. 42, p. 176, Jan. 1983.
-
(1983)
Appl. Phys. Lett.
, vol.42
, pp. 176
-
-
Neugroschel, A.1
Lindholm, F.A.2
-
79
-
-
0001099792
-
Minority carrier recombination in heavily-doped silicon
-
M. S. Tyagi and R. Van Overstraeten, “Minority carrier recombination in heavily-doped silicon,” Solid-State Electron., vol. 26, p. 577, 1983.
-
(1983)
Solid-State Electron.
, vol.26
, pp. 577
-
-
Tyagi, M.S.1
Van Overstraeten, R.2
-
80
-
-
0020766903
-
Carrier recombination and lifetime in highly doped silicon
-
J. G. Fossum, R. P. Mertens, D. S. Lee, and J. F. Nijs, “Carrier recombination and lifetime in highly doped silicon,” Solid-State State Electron., vol. 26, p. 569, 1983.
-
(1983)
Solid-State State Electron.
, vol.26
, pp. 569
-
-
Fossum, J.G.1
Mertens, R.P.2
Lee, D.S.3
Nijs, J.F.4
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