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Volumn 72, Issue 2, 1984, Pages 148-164

Electrical Current and Carrier Density in Degenerate Materials with Nonuniform Band Structure

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT AND CARRIER DENSITIES; MINORITY CARRIER FLOW; NONUNIFORM BAND STRUCTURE;

EID: 0021377152     PISSN: 00189219     EISSN: 15582256     Source Type: Journal    
DOI: 10.1109/PROC.1984.12836     Document Type: Article
Times cited : (131)

References (80)
  • 1
    • 36149012552 scopus 로고
    • Deformation potentials and mobilities in non-polar crystals
    • J. Bardeen and W. Shockley, “Deformation potentials and mobilities in non-polar crystals,” Phys. Rev., vol. 80, p. 72, 1950.
    • (1950) Phys. Rev. , vol.80 , pp. 72
    • Bardeen, J.1    Shockley, W.2
  • 2
    • 0000291341 scopus 로고
    • Quasi-electric and quasi-magnetic fields in nonuniform semiconductors
    • H. Kroemer, “Quasi-electric and quasi-magnetic fields in nonuniform semiconductors,” RCA Rev., vol. 18, p. 332, 1957.
    • (1957) RCA Rev. , vol.18 , pp. 332
    • Kroemer, H.1
  • 3
    • 0039505543 scopus 로고
    • Generation of an emf in semiconductors with nonequilibrium equilibrium current carrier concentration
    • July
    • J. Tauc, “Generation of an emf in semiconductors with nonequilibrium equilibrium current carrier concentration,” Rev. Mod. Phys., vol. 29, pp. 308–324, July 1957.
    • (1957) Rev. Mod. Phys. , vol.29 , pp. 308-324
    • Tauc, J.1
  • 4
    • 0001630986 scopus 로고
    • Electrical conduction and the photovoltaic effect in semiconductors with position-dependent band gap
    • P. R. Emtage, “Electrical conduction and the photovoltaic effect in semiconductors with position-dependent band gap,” J. Appl. Phys., vol. 33, p. 1950, 1962.
    • (1962) J. Appl. Phys. , vol.33 , pp. 1950
    • Emtage, P.R.1
  • 5
    • 0037867959 scopus 로고
    • n − n semiconductor heterojunctions
    • W. G. Oldham and A. G. Milnes, “n − n semiconductor heterojunctions,” Solid-State Electron., vol. 6, p. 121, 1963.
    • (1963) Solid-State Electron. , vol.6 , pp. 121
    • Oldham, W.G.1    Milnes, A.G.2
  • 6
    • 0014363866 scopus 로고
    • Transport of photocarriers in Cdx Hg1−x Te graded-gap structures
    • G. Cohen-Solal and Y. Marfaing, “Transport of photocarriers in Cdx Hg1−x Te graded-gap structures,” Solid-State Electron., vol. 11, p. 1131, 1968.
    • (1968) Solid-State Electron. , vol.11 , pp. 1131
    • Cohen-Solal, G.1    Marfaing, Y.2
  • 7
    • 0015107864 scopus 로고
    • Photovoltaic effect in graded bandgap structures
    • Aug.
    • Y. Marfaing and J. Chevallier, “Photovoltaic effect in graded bandgap structures,” IEEE Trans. Electron Devices, vol. ED-18, pp. 465–471, Aug. 1971.
    • (1971) IEEE Trans. Electron Devices , vol.ED-18 , pp. 465-471
    • Marfaing, Y.1    Chevallier, J.2
  • 8
    • 84938006654 scopus 로고
    • Theory of a wide-gap emitter for transistors
    • H. Kroemer, “Theory of a wide-gap emitter for transistors,” Proc. IRE, vol. 45, p. 1535, 1957.
    • (1957) Proc. IRE , vol.45 , pp. 1535
    • Kroemer, H.1
  • 9
    • 49949143737 scopus 로고
    • The operation of graded band gap base transistors at high currents
    • D. D. Martin and R. Stratton, “The operation of graded band gap base transistors at high currents,” Solid-State Electron., vol. 9, p. 237, 1966.
    • (1966) Solid-State Electron. , vol.9 , pp. 237
    • Martin, D.D.1    Stratton, R.2
  • 10
    • 0000114183 scopus 로고
    • Broadening of impurity bands in heavily doped semiconductors
    • T. N. Morgan, “Broadening of impurity bands in heavily doped semiconductors,” Phys. Rev., vol. 139, pp. A343–348, 1965.
    • (1965) Phys. Rev. , vol.139 , pp. A343-A348
    • Morgan, T.N.1
  • 11
    • 0003019646 scopus 로고
    • Thomas-Fermi approach to impure semiconductor band structure
    • E. O. Kane, “Thomas-Fermi approach to impure semiconductor band structure,” Phys. Rev., vol. 131, pp. 79–88, 1963.
    • (1963) Phys. Rev. , vol.131 , pp. 79-88
    • Kane, E.O.1
  • 13
    • 36049058901 scopus 로고
    • Impurity-band tails in the high-density density limit. I. Minimum counting methods
    • B. I. Halperin and M. Lax, “Impurity-band tails in the high-density density limit. I. Minimum counting methods,” Phys. Rev., vol. 144, p. 722, 1966.
    • (1966) Phys. Rev. , vol.144 , pp. 722
    • Halperin, B.I.1    Lax, M.2
  • 14
    • 0001682973 scopus 로고
    • Theory of the band structure of very degenerate semiconductors
    • P. A. Wolff, “Theory of the band structure of very degenerate semiconductors,” Phys. Rev., vol. 126, pp. 405–412, 1962.
    • (1962) Phys. Rev. , vol.126 , pp. 405-412
    • Wolff, P.A.1
  • 15
    • 0012954011 scopus 로고
    • Description of impurity ionization in semiconductors by chemical thermodynamics
    • W. W. Harvey, “Description of impurity ionization in semiconductors by chemical thermodynamics,” Phys. Rev., vol. 123, pp. 1666–1673, 1961.
    • (1961) Phys. Rev. , vol.123 , pp. 1666-1673
    • Harvey, W.W.1
  • 16
    • 0004834872 scopus 로고
    • Conductivity and Hall effect in the intrinsic range of germanium
    • June
    • F. J. Morin and J. P. Maita, “Conductivity and Hall effect in the intrinsic range of germanium,” Phys. Rev., vol. 94, pp. 1525–1529, June 1954.
    • (1954) Phys. Rev. , vol.94 , pp. 1525-1529
    • Morin, F.J.1    Maita, J.P.2
  • 18
    • 0010584131 scopus 로고
    • The temperature dependence of ideal current gain in double diffused silicon transistors
    • W. L. Kaufmann and A. A. Bergh, “The temperature dependence of ideal current gain in double diffused silicon transistors,” IEEE Trans. Electron Devices, vol. ED-15, pp. 732–735, 1968.
    • (1968) IEEE Trans. Electron Devices , vol.ED-15 , pp. 732-735
    • Kaufmann, W.L.1    Bergh, A.A.2
  • 19
    • 84938021969 scopus 로고
    • Investigation of current-gain temperature dependence in silicon transistors
    • D. Buhanan, “Investigation of current-gain temperature dependence in silicon transistors,” IEEE Trans. Electron Devices, vol. ED-16, pp. 117–124, 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 117-124
    • Buhanan, D.1
  • 21
    • 0015143255 scopus 로고
    • The influence of heavy doping on the emitter efficiency of a bipolar transistor
    • H. J. J. DeMan, “The influence of heavy doping on the emitter efficiency of a bipolar transistor,” IEEE Trans. Electron Devices, vol. ED-18, pp. 833–835, 1971.
    • (1971) IEEE Trans. Electron Devices , vol.ED-18 , pp. 833-835
    • DeMan, H.J.J.1
  • 22
    • 36149008418 scopus 로고
    • Solubility of flaws in heavily-doped doped semiconductors
    • W. Shockley and J. L. Moll, “Solubility of flaws in heavily-doped doped semiconductors,” Phys. Rev., vol. 119, p. 1480, 1960.
    • (1960) Phys. Rev. , vol.119 , pp. 1480
    • Shockley, W.1    Moll, J.L.2
  • 23
    • 0343993745 scopus 로고
    • Distribution and precipitation of gold in phosphorous-diffused silicon
    • M. L. Joshi and S. Dash, “Distribution and precipitation of gold in phosphorous-diffused silicon,” J. Appl. Phys., vol. 37, pp. 2453–2457, 1966.
    • (1966) J. Appl. Phys. , vol.37 , pp. 2453-2457
    • Joshi, M.L.1    Dash, S.2
  • 25
    • 0016049707 scopus 로고
    • Excess vacancy generation mechanism at phosphorous diffusion into silicon
    • M. Yoshida, E. Arai, H. Nakamura, and Y. Tterunuma, “Excess vacancy generation mechanism at phosphorous diffusion into silicon,” J. Appl. Phys., vol. 45, p. 1498, 1974.
    • (1974) J. Appl. Phys. , vol.45 , pp. 1498
    • Yoshida, M.1    Arai, E.2    Nakamura, H.3    Tterunuma, Y.4
  • 27
    • 0017481552 scopus 로고
    • Carrier generation, recombination, trapping, and transport in semiconductors with position dependent composition
    • Apr.
    • C. T. Sah and F. A. Lindholm, “Carrier generation, recombination, trapping, and transport in semiconductors with position dependent composition,” IEEE Trans. Electron Devices, vol. ED-24, pp. 358–362, Apr. 1977.
    • (1977) IEEE Trans. Electron Devices , vol.ED-24 , pp. 358-362
    • Sah, C.T.1    Lindholm, F.A.2
  • 28
    • 0017482945 scopus 로고
    • A computer analysis of heterojunction and graded composition solar cells
    • J. E. Sutherland and J. R. Hauser, “A computer analysis of heterojunction and graded composition solar cells,” IEEE Trans. Electron Devices, vol. ED-24, p. 363, 1977.
    • (1977) IEEE Trans. Electron Devices , vol.ED-24 , pp. 363
    • Sutherland, J.E.1    Hauser, J.R.2
  • 29
    • 0017513097 scopus 로고
    • Current in semiconductors with position-dependent band gap and electron affinity
    • A. H. Marshak and K. M. van Vliet, “Current in semiconductors with position-dependent band gap and electron affinity,” Phys. Status Solidi (a), vol. 42, p. 279, 1977.
    • (1977) Phys. Status Solidi (a) , vol.42 , pp. 279
    • Marshak, A.H.1    van Vliet, K.M.2
  • 30
    • 0017930767 scopus 로고
    • Electrical current in solids with position-dependent band structure
    • —, “Electrical current in solids with position-dependent band structure,” Solid-State Electron., vol. 21, pp. 417–427, 1978.
    • (1978) Solid-State Electron. , vol.21 , pp. 417-427
    • Marshak, A.H.1    van Vliet, K.M.2
  • 31
    • 0017933075 scopus 로고
    • Carrier densities and emitter efficiency in degenerate materials with position-dependent band structure
    • —, “Carrier densities and emitter efficiency in degenerate materials with position-dependent band structure,” Solid-State Electron., vol. 21, pp. 429–434, 1978.
    • (1978) Solid-State Electron. , vol.21 , pp. 429-434
    • Marshak, A.H.1    van Vliet, K.M.2
  • 33
    • 0019143476 scopus 로고
    • On the separation of quasi-Fermi levels and the boundary conditions for junction devices
    • A. H. Marshak and K. M. van Vliet, “On the separation of quasi-Fermi levels and the boundary conditions for junction devices,” Solid-State Electron., vol. 23, pp. 1223–1228, 1980.
    • (1980) Solid-State Electron. , vol.23 , pp. 1223-1228
    • Marshak, A.H.1    van Vliet, K.M.2
  • 34
    • 0017244588 scopus 로고
    • Conduction current and generalized Einstein relations for degenerate semiconductors and metals
    • K. M. van Vliet and A. H. Marshak, “Conduction current and generalized Einstein relations for degenerate semiconductors and metals,” Phys. Status Solidi (b), vol. 78, p. 501, 1976.
    • (1976) Phys. Status Solidi (b) , vol.78 , pp. 501
    • van Vliet, K.M.1    Marshak, A.H.2
  • 35
    • 0017488005 scopus 로고
    • Two formulations of semi-conductor transport equations
    • P. T. Landsberg and S. A. Hope, “Two formulations of semi-conductor transport equations,” Solid-State Electron., vol. 20, p. 421, 1977.
    • (1977) Solid-State Electron. , vol.20 , pp. 421
    • Landsberg, P.T.1    Hope, S.A.2
  • 36
    • 36149009855 scopus 로고
    • The structure of electronic excitation levels in insulating crystals
    • G. H. Wannier, “The structure of electronic excitation levels in insulating crystals,” Phys. Rev., vol. 52, p. 191, 1937.
    • (1937) Phys. Rev. , vol.52 , pp. 191
    • Wannier, G.H.1
  • 37
    • 0000974354 scopus 로고
    • Wannier-Slater theorem for solids with nonuniform band structure
    • K. M. van Vliet and A. H. Marshak, “Wannier-Slater theorem for solids with nonuniform band structure,” Phys. Rev. B, vol. 26, pp. 6734–6738, 1982.
    • (1982) Phys. Rev. B , vol.26 , pp. 6734-6738
    • van Vliet, K.M.1    Marshak, A.H.2
  • 39
    • 0001590784 scopus 로고
    • Simple band model for amorphous semiconducting alloys
    • M. H. Cohen, H. Fritzsche, and S. R. Ovshinsky, “Simple band model for amorphous semiconducting alloys,” Phys. Rev. Lett., vol. 22, p. 1065, 1969.
    • (1969) Phys. Rev. Lett. , vol.22 , pp. 1065
    • Cohen, M.H.1    Fritzsche, H.2    Ovshinsky, S.R.3
  • 40
    • 84983886626 scopus 로고
    • The effective density of states in the conduction and valence bands for arbitrary band structure
    • K. M. van Vliet and A. H. Marshak, “The effective density of states in the conduction and valence bands for arbitrary band structure,” Phys. Status Solidi (b), vol. 101, pp. 525–530, 1980.
    • (1980) Phys. Status Solidi (b) , vol.101 , pp. 525-530
    • van Vliet, K.M.1    Marshak, A.H.2
  • 42
    • 0020206154 scopus 로고
    • Approximations for Fermi-Dirac integrals, especially the function F1/2 (η) used to describe electron density in a semiconductor
    • J. S. Blakemore, “Approximations for Fermi-Dirac integrals, especially the function F1/2 (η) used to describe electron density in a semiconductor,” Solid-State Electron., vol. 25, pp. 1067–1076, 1982.
    • (1982) Solid-State Electron. , vol.25 , pp. 1067-1076
    • Blakemore, J.S.1
  • 43
    • 0000495511 scopus 로고
    • Interband magneto-optical absorption in gallium arsenide
    • Q. H. F. Vrehen, “Interband magneto-optical absorption in gallium arsenide,” J. Phys. Chem. Solids, vol. 29, p. 129, 1968.
    • (1968) J. Phys. Chem. Solids , vol.29 , pp. 129
    • Vrehen, Q.H.F.1
  • 45
    • 5844411337 scopus 로고
    • Impurity concentration dependence of the density of states in semiconductors
    • D. D. Kleppinger and F. A. Lindholm, “Impurity concentration dependence of the density of states in semiconductors,” Solid-State Electron., vol. 14, p. 199, 1971.
    • (1971) Solid-State Electron. , vol.14 , pp. 199
    • Kleppinger, D.D.1    Lindholm, F.A.2
  • 46
    • 0015067896 scopus 로고
    • Impurity concentration dependent density of states and resulting Fermi Level for silicon
    • —, “Impurity concentration dependent density of states and resulting Fermi Level for silicon,” Solid-State Electron., vol. 14, pp. 407–416, 1971.
    • (1971) Solid-State Electron. , vol.14 , pp. 407-416
    • Kleppinger, D.D.1    Lindholm, F.A.2
  • 47
    • 0015683137 scopus 로고
    • Transport equations in heavily doped silicon, and the current gain of a bipolar transistor
    • M. S. Mock, “Transport equations in heavily doped silicon, and the current gain of a bipolar transistor,” Solid-State Electron., vol. 16, pp. 1251–1259, 1973.
    • (1973) Solid-State Electron. , vol.16 , pp. 1251-1259
    • Mock, M.S.1
  • 48
    • 49449125417 scopus 로고
    • The emitter efficiency of silicon transistors
    • B. L. H. Wilson, “The emitter efficiency of silicon transistors,” Solid-State Electron., vol. 20, pp. 71–74, 1977.
    • (1977) Solid-State Electron. , vol.20 , pp. 71-74
    • Wilson, B.L.H.1
  • 49
    • 0343336454 scopus 로고
    • The effect of electron interaction on the band gap of extrinsic semiconductors
    • Also see P. A. Stern and J. C. Inkson, Comment on Energy gap in Si and Ge: impurity dependence, J. Appl. Phys., vol. 52, pp. 6432–6433, Oct. 1981.
    • J. C. Inkson, “The effect of electron interaction on the band gap of extrinsic semiconductors,” J. Phys. C. Solid-State Phys., vol. 9, pp. 117–1183, 1976. Also see P. A. Stern and J. C. Inkson, “Comment on ‘Energy gap in Si and Ge: impurity dependence’,” J. Appl. Phys., vol. 52, pp. 6432–6433, Oct. 1981.
    • (1976) J. Phys. C. Solid-State Phys. , vol.9 , pp. 117-1183
    • Inkson, J.C.1
  • 50
    • 0018491470 scopus 로고
    • Bandgap narrowing in moderately to heavily doped silicon
    • H. P. D. Lanyon and R. A. Tuft, “Bandgap narrowing in moderately to heavily doped silicon,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1014–1018, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1014-1018
    • Lanyon, H.P.D.1    Tuft, R.A.2
  • 51
    • 0019016773 scopus 로고
    • Energy gap in Si and Ge: Impurity dependence
    • May
    • G. D. Mahan, “Energy gap in Si and Ge: Impurity dependence,” J. Appl. Phys., vol. 51, pp. 2634–2649, May 1980.
    • (1980) J. Appl. Phys. , vol.51 , pp. 2634-2649
    • Mahan, G.D.1
  • 52
    • 0001371339 scopus 로고
    • Band-gap narrowing in heavily doped many-valley semiconductors
    • Aug
    • K.-F. Berggren and B. E. Sernelius, “Band-gap narrowing in heavily doped many-valley semiconductors, Phys. Rev. B, vol. 24, pp. 1971–1986, Aug 1981.
    • (1981) Phys. Rev. B , vol.24 , pp. 1971-1986
    • Berggren, K.F.1    Sernelius, B.E.2
  • 53
    • 0019900516 scopus 로고
    • Effect of donor impurities on the conduction and valence bands of silicon
    • Jan.
    • J. R. Lowney and H. S. Bennett, “Effect of donor impurities on the conduction and valence bands of silicon,” J. Appl. Phys., vol. 53, pp. 433–438, Jan. 1982.
    • (1982) J. Appl. Phys. , vol.53 , pp. 433-438
    • Lowney, J.R.1    Bennett, H.S.2
  • 54
    • 0017951419 scopus 로고
    • Characteristics of the distribution of the density of states in heavily doped silicon
    • K. P. Abdurakmanov, S. H. Mirakhmedov, and A. T. Teshabaev, “Characteristics of the distribution of the density of states in heavily doped silicon,” Soy. Phys.—Semicond., vol. 12, pp. 457–459, 1978.
    • (1978) Soy. Phys.—Semicond. , vol.12 , pp. 457-459
    • Abdurakmanov, K.P.1    Mirakhmedov, S.H.2    Teshabaev, A.T.3
  • 55
    • 0000302768 scopus 로고
    • Nuclear magnetic resonance studies of the metallic transitions in doped silicon
    • R. K. Sundfors and D. F. Holcomb, “Nuclear magnetic resonance studies of the metallic transitions in doped silicon,” Phys. Rev., vol. 136A, pp. 810–820, 1964.
    • (1964) Phys. Rev. , vol.136 A , pp. 810-820
    • Sundfors, R.K.1    Holcomb, D.F.2
  • 56
    • 0001519718 scopus 로고
    • Semiconductor-to-metal transition in n-type group IV semiconductors
    • M. N. Alexander and D. F. Holcomb, “Semiconductor-to-metal transition in n-type group IV semiconductors,” Rev. Mod. Phys., vol. 40, p. 815, 1968.
    • (1968) Rev. Mod. Phys. , vol.40 , pp. 815
    • Alexander, M.N.1    Holcomb, D.F.2
  • 58
    • 19244381498 scopus 로고
    • Physical mechanisms underlying bandgap narrowing
    • (Washington, DC)
    • K. M. van Vliet and A. H. Marshak, “Physical mechanisms underlying bandgap narrowing,” in Tech. Dig. Int. Electron Devices Meet., pp. 312–315 (Washington, DC, 1978).
    • (1978) Tech. Dig. Int. Electron Devices Meet. , pp. 312-315
    • van Vliet, K.M.1    Marshak, A.H.2
  • 59
    • 0018951248 scopus 로고
    • The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform composition
    • —, “The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform composition,” Solid-State Electron., vol. 23, pp. 49–53, 1980.
    • (1980) Solid-State Electron. , vol.23 , pp. 49-53
    • van Vliet, K.M.1    Marshak, A.H.2
  • 60
    • 0019544925 scopus 로고
    • Transport equations for the analysis of heavily doped semiconductor devices
    • M. S. Lundstrom, R. J. Schwartz, and J. L. Gray, “Transport equations for the analysis of heavily doped semiconductor devices,” Solid-State Electron., vol. 24, pp. 195–202, 1981.
    • (1981) Solid-State Electron. , vol.24 , pp. 195-202
    • Lundstrom, M.S.1    Schwartz, R.J.2    Gray, J.L.3
  • 61
    • 84939753062 scopus 로고
    • Transport in devices with nonuniform band structure including devices with band gap narrowing due to heavy doping
    • (Delhi, India), Nov.
    • C. M. Van Vliet and A. H. Marshak, “Transport in devices with nonuniform band structure including devices with band gap narrowing due to heavy doping,” in Proc. Int. Workshop on Solid State Devices (Delhi, India), Nov. 1981.
    • (1981) Proc. Int. Workshop on Solid State Devices
    • Van Vliet, C.M.1    Marshak, A.H.2
  • 62
    • 0020180840 scopus 로고
    • Numerical analysis of heterostructure semiconductor devices
    • M. S. Lundstrom and R. J. Schuelke, “Numerical analysis of heterostructure semiconductor devices,” IEEE Trans. Electron Devices, vol. ED-30, p. 1151, 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 1151
    • Lundstrom, M.S.1    Schuelke, R.J.2
  • 63
    • 0018547329 scopus 로고
    • One-dimensional device model of the npn bipolar transistor including heavy doping effects under Fermi Statics
    • A. Nakagawa, “One-dimensional device model of the npn bipolar transistor including heavy doping effects under Fermi Statics,” Solid-State Electron., vol. 22, pp. 943–949, 1979.
    • (1979) Solid-State Electron. , vol.22 , pp. 943-949
    • Nakagawa, A.1
  • 64
    • 84885538353 scopus 로고
    • On the diffusion theory of rectification
    • P. T. Landsberg, “On the diffusion theory of rectification,” Proc. Roy. Soc. Ser. A, vol. 213, pp. 226–237, 1952.
    • (1952) Proc. Roy. Soc. Ser. A , vol.213 , pp. 226-237
    • Landsberg, P.T.1
  • 65
    • 84937998390 scopus 로고
    • Alternative formulation of generalized Einstein relation for degenerate semiconductors
    • S. S. Li and F. A. Lindholm, “Alternative formulation of generalized Einstein relation for degenerate semiconductors,” Proc. IEEE, vol. 56, pp. 1256–1257, 1988.
    • (1988) Proc. IEEE , vol.56 , pp. 1256-1257
    • Li, S.S.1    Lindholm, F.A.2
  • 66
    • 33645066679 scopus 로고
    • Minority carrier injection into heavily doped silicon
    • J. W. Slotboom, “Minority carrier injection into heavily doped silicon,” Solid-State Electron., vol. 20, pp. 167–170, 1977.
    • (1977) Solid-State Electron. , vol.20 , pp. 167-170
    • Slotboom, J.W.1
  • 68
    • 0019033950 scopus 로고
    • A new solution for minority-carrier injection into the emitter of a bipolar transistor
    • R. Amantea, “A new solution for minority-carrier injection into the emitter of a bipolar transistor,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1231–1238, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1231-1238
    • Amantea, R.1
  • 69
    • 0019608018 scopus 로고
    • An analytic model for minority-carrier transport in heavily doped regions of silicon devices
    • J. G. Fossum and M. A. Shibib, “An analytic model for minority-carrier transport in heavily doped regions of silicon devices,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1018–1025, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , pp. 1018-1025
    • Fossum, J.G.1    Shibib, M.A.2
  • 70
    • 33744675217 scopus 로고
    • On the deionization of impurities as an explanation for excess intrinsic carrier density in heavily doped silicon
    • M. A. Shibib and F. A. Lindholm, “On the deionization of impurities as an explanation for excess intrinsic carrier density in heavily doped silicon,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1304–1306, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1304-1306
    • Shibib, M.A.1    Lindholm, F.A.2
  • 71
    • 0018482035 scopus 로고
    • Law of the junction for degenerate material with position-dependent band gap and electron affinity
    • A. H. Marshak and R. Shrivastava, “Law of the junction for degenerate material with position-dependent band gap and electron affinity,” Solid-State Electron., vol. 22, pp. 567–571, 1979.
    • (1979) Solid-State Electron. , vol.22 , pp. 567-571
    • Marshak, A.H.1    Shrivastava, R.2
  • 72
    • 0018479757 scopus 로고
    • Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors
    • June
    • M. A. Shibib, F. A. Lindholm, and F. Therez, “Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors,” IEEE Trans. Electron Devices, vol. ED-26, pp. 959–965, June 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 959-965
    • Shibib, M.A.1    Lindholm, F.A.2    Therez, F.3
  • 73
    • 84916373780 scopus 로고
    • Effects of electrons and holes on the transition layer characteristics of linearly graded p-n junction
    • C.-T. Sah, “Effects of electrons and holes on the transition layer characteristics of linearly graded p-n junction,” Proc. IRE, vol. 49, pp. 603–618, 1961.
    • (1961) Proc. IRE , vol.49 , pp. 603-618
    • Sah, C.T.1
  • 75
    • 0016072230 scopus 로고
    • Polarizabilities of shallow donors in silicon
    • J. Bethin, T. G. Castner, and N. K. Lee, “Polarizabilities of shallow donors in silicon,” Solid-State Commun., vol. 14, p. 1321, 1974.
    • (1974) Solid-State Commun. , vol.14 , pp. 1321
    • Bethin, J.1    Castner, T.G.2    Lee, N.K.3
  • 76
    • 0019634836 scopus 로고
    • The effect of position-dependent dielectric constant on the electric field and charge density in a p-n junction
    • M. H. Andrews, A. H. Marshak, and R. Shrivastava, “The effect of position-dependent dielectric constant on the electric field and charge density in a p-n junction,” J. Appl. Phys., vol. 52, p. 6783, 1981.
    • (1981) J. Appl. Phys. , vol.52 , pp. 6783
    • Andrews, M.H.1    Marshak, A.H.2    Shrivastava, R.3
  • 77
    • 4243717050 scopus 로고
    • Dielectric anomaly and the metal-insulator transition in n-type type silicon
    • T. G. Castner, N. K. Lee, G. S. Cieloszyk, and G. L. Solinger, “Dielectric anomaly and the metal-insulator transition in n-type type silicon,” Phys. Rev. Lett., vol. 34, p. 1627, 1975.
    • (1975) Phys. Rev. Lett. , vol.34 , pp. 1627
    • Castner, T.G.1    Lee, N.K.2    Cieloszyk, G.S.3    Solinger, G.L.4
  • 78
    • 36749104810 scopus 로고
    • Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation
    • Jan.
    • A. Neugroschel and F. A. Lindholm, “Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation,” Appl. Phys. Lett., vol. 42, p. 176, Jan. 1983.
    • (1983) Appl. Phys. Lett. , vol.42 , pp. 176
    • Neugroschel, A.1    Lindholm, F.A.2
  • 79
    • 0001099792 scopus 로고
    • Minority carrier recombination in heavily-doped silicon
    • M. S. Tyagi and R. Van Overstraeten, “Minority carrier recombination in heavily-doped silicon,” Solid-State Electron., vol. 26, p. 577, 1983.
    • (1983) Solid-State Electron. , vol.26 , pp. 577
    • Tyagi, M.S.1    Van Overstraeten, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.