Analytical modeling of polycrystalline silicon emitter bipolar transistors under high-level injection

Solid State Electronics

Volumn 37, Issue 8, 1994, Pages 1521-1529

  Chyan, Yih Feng ^a   Chang, Chun Yen ^a   Sze, S M ^a   Lin, Meng Jang ^a   Liao, Kenneth ^b   Reif, Rafael ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS;

CURRENT GAIN; ELECTRON CURRENT DENSITY; ENERGY GAP; FORWARD TRANSIT TIME; POLYEMITTER;

ELECTRIC CURRENTS;

EID: 0028484977     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90160-0     Document Type: Article

References (26)

1. Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors
2. T) falloff at high current densities
3. Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effects
4. Unified minority-carrier transport equation for polysilicon or heteromaterial emitter contact bipolar transistors
5. A comprehensive analytical and numerical model of polysilicon emitter contacts in bipolar transistors