Analytical base transit time model of uniformly-doped-based bipolar transistors for high-injection regions

Solid State Electronics

Volumn 36, Issue 1, 1993, Pages 109-110

  Suzuki, Kunihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); SEMICONDUCTOR DEVICE MODELS;

COLLECTOR CURRENT DENSITIES; HIGH-INJECTION REGIONS; UNIFORMLY-DOPED-BASE BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0027147973     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90077-4     Document Type: Article

References (6)

1. Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction
2. T) falloff at high current densities
3. Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effects
4. On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current