Current-voltage relations and equivalent circuits of transistors at high injection levels

Solid State Electronics

Volumn 17, Issue 3, 1974, Pages 267-284

  van Vliet, K M ^a   Min, H S ^b  

^a UNIVERSITÉ DE MONTRÉAL   (Canada)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS;

EID: 0016037151     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(74)90015-X     Document Type: Article

References (33)

1. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries
2. A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device
3. Some Aspects of the Design of Power Transistors
4. T) falloff at high current densities
5. The cutoff frequency falloff in UHF transistors at high currents
6. Noise figure of UHF transistors as a function of frequency and bias conditions
7. On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current
8. Static V-I relationships in transistors at high injection levels
9. Assessing model adequacy and selecting model complexity in integrated-circuit simulation
10. High current regimes in transistor collector regions
11. High injection in epitaxial transistors
12. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
13. Boundary conditions for the space-charge region of a P-N-junction
14. An Integral Charge Control Model of Bipolar Transistors
15. Circuit representation of the integral charge-control model of bipolar transistors
16. A Charge Control Relation for Bipolar Transistors
17. Incorporation of the early effect in the Ebers-Moll model
18. Shot and Thermal Noise in Germanium and Silicon Transistors at High-Level Current Injections