Effect of base profile on the base transit time of the bipolar transistor for all levels of injection

IEEE Transactions on Electron Devices

Volumn 41, Issue 2, 1994, Pages 212-216

  Yuan, J S ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SWITCHING;

BASE PROFILE EFFECT; BASE TRANSIT TIME; INJECTION LEVELS; POLYSILICON BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0028374604     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.277377     Document Type: Article

References (15)

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