Optimum base doping profile for minimum base transit time

IEEE Transactions on Electron Devices

Volumn 38, Issue 9, 1991, Pages 2128-2133

  Suzuki, Kunihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - DOPING;

BASE DOPING PROFILE; EPITAXIAL BASE TRANSISTORS; HOMOJUNCTION TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0026222868     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.83740     Document Type: Article

References (18)

1. M. Ugajin, S. Konaka, K. Yokoyama, and Y. Amemiya, “A simulated study of high-speed silicon heteroemitter bipolar transistors,” IEEE Trans. Electron Devices, vol. 36, pp. 1102–1109, 1989.
2. S. Szeto and R. Reif, “Reduction of f by nonuniform base bandgap narrowing,” IEEE Electron Device Lett., vol. 10, pp. 341–343, 1989.
3. H. Schaber, J. Bieger, T. F. Meister, K. Ehinger, and R. Kakoschke, “Process and device related scaling considerations for polysilicon emitter bipolar transistors,” in IEDM Tech. Dig., 1987, pp. 171— 175.
4. P. J. Wijnen and R. D. Gardner, “A new approach to optimizing the base profile for high-speed bipolar transistors,” IEEE Electron Device Lett., vol. 11, pp. 149–152, 1990.
5. K. Suzuki, T. Fukano, H. Ishiwari, T. Yamazaki, M. Taguchi, T. Ito, and H. Ishikawa, “50 nm ultrathin base silicon bipolar device fabrication based on photo epitaxial growth,” in 1989 Symp. on VLSI Technology Tech. Dig., pp. 91–92.
6. G. L. Patton, J. H. Comfort, B. S. Meyerson, E. F. Crabbe, G. L. J. Scilla, E. de Fresart, J. M. C. Stork, J. Y. C. Sun, D. L. Harame, and J. Burghartz, “63-75 GHz f T SiGe-base heterojunction bipolar technology,” in 1990 Symp. VLSI Technology Tech. Dig., pp. 49–50.
7. R. J. V. Overstraeten, H. J. Deman, and R. P. Mertens, “Transport equation in heavy doped silicon,” IEEE Trans. Electron Devices, vol. ED-29, pp. 290–298, 1973.
8. J. del Alamo, S. Swirhum, and R. M. Swanson, “Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon,” in 1985 IEDM Tech. Dig., pp. 290–293.
9. T. Chen, C. T. Chuang, G. P. Li, S. Basavaiah, D. D. Tang, M. B. Ketchen, and T. H. Ning, “An advanced bipolar transistor with self-aligned ion-implanted base and w/poly emitter,” IEEE Trans. Electron Devices, vol. 35, pp. 1322–1327, 1988.
10. T. Yamaguchi, Y. S. Yu, E. E. Lane, J. S. Lee, E. E. Patton, R. D. Herman, D. R. Ahrendt, V. F. Drobny, T. H. Yuzuriha, and V. E. Garuts, “Process and device performance of a high-speed double polySi bipolar technology using borsenic-poly process with coupling-base implant,” IEEE Trans. Electron Devices, vol. 35, pp. 1247–1256, 1988.
11. H. Kroemer, “Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region,” Solid-State Electron., vol. 28, pp. 1101–1103, 1985.
12. W. Lee, S. E. Laux, M. V. Fischetti, and D. D. Tang, “Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors,” in 1989 IEDM Tech. Dig., pp. 473–476.
13. J. W. Slotboom and H. C. de Graaff, “Measurement of bandgap narrowing in Si bipolar transistors,” Solid-State Electron., vol. 19, pp. 857–862, 1976.
14. S. E. Swirhum, Y. H. Kwark, and R. M. Swanson, “Measurement of electron lifetime, electron mobility and band-gap narrowing in heavily doped p-type silicon,” in 1986 IEDM Tech. Dig., pp. 24–27.
15. K. K. Thornber, “Relation of drift velocity to low-field mobility and high-field saturation velocity,” J. Appl. Phys., vol. 51, pp. 2127–2136, 1979.
16. N. D. Arora, J. R. Hauser, and D. J. Roulston, “Electron and hole mobilities in silicon as a function of concentration and temperature,” IEEE Trans. Electron Devices, vol. ED-29, pp. 292–295, 1982.
17. D. A. Antoniadis and R. W. Dutton, “Models for computer simulation of complete IC fabrication process,” IEEE Trans. Electron Devices, vol. ED-26, pp. 490–500, 1979.
18. P. F. Lu, J. H. Comfort, D. D. Tang, B. S. Meyerson, and J. Y. C. Sun, “The implementation of a reduced-field profile design for high-performance bipolar transistors,” IEEE Electron Device Lett., vol. 11, pp. 336–338, 1990.