Transport equations for the analysis of heavily doped semiconductor devices

Solid State Electronics

Volumn 24, Issue 3, 1981, Pages 195-202

  Lundstrom, M S ^a   Schwartz, R J ^a   Gray, J L ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0019544925     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(81)90082-4     Document Type: Article

References (25)

1. Transport equations in heavy doped silicon
2. Fundamental electronic mechanisms limiting the performance of solar cells
3. The influence of heavy doping on the emitter efficiency of a bipolar transistor
4. Influence of bandgap narrowing on the performance of silicon n-p solar cells
5. A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices
6. Heavy doping effects in p-n-p bipolar transistors
7. Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors
8. Bandgap narrowing in moderately to heavily doped silicon