One-Dimensional All Injection Nonquasi-static Models for Arbitrarily Doped Quasi-neutral Layers in Bipolar Junction Transistors Including Plasma-Induced Energy-Gap Narrowing

IEEE Transactions on Electron Devices

Volumn 37, Issue 1, 1990, Pages 250-261

  Wu, Ben S ^a   Lindholm, Fredrik A ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, BIPOLAR--JUNCTIONS; SEMICONDUCTOR MATERIALS--DOPING;

DOPING PROFILES; ELECTRON-HOLE PLASMA; ENERGY GAP; GUMMEL-POON (GP) MODEL; SHOCKLEY EQUATIONS;

TRANSISTORS, BIPOLAR;

EID: 0025210831     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43822     Document Type: Article

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