Analytical model for GaAs pin diodes for a wide range of currents and temperatures

Solid State Electronics

Volumn 35, Issue 6, 1992, Pages 821-827

  Bellone, S ^a   Cocorullo, G ^b   Della Corte, F G ^b   Hartnagel, H L ^c   Schweeger, G ^c  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b CNR   (Italy)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - ION IMPLANTATION; SEMICONDUCTOR DIODES - APPLICATIONS; SEMICONDUCTOR DIODES - HIGH TEMPERATURE APPLICATIONS; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

LOW LEAKAGE CURRENT; PIN DIODES;

SEMICONDUCTOR DIODES;

EID: 0026880889     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90284-J     Document Type: Article

References (16)

1. The effects of heavy impurity doping on AlGaAs/GaAs bipolar transistors
2. +(epitaxial) diodes
3. Experimental and theoretical evaluation of boron diffused high-low junctions for BSF solar cells