Base Transit Time of Shallow-Base Bipolar Transistors Considering Velocity Saturation at Base-Collector Junction

IEEE Transactions on Electron Devices

Volumn 39, Issue 3, 1992, Pages 623-628

  Suzuki, Kunihiro ^a   Nakayama, Noriaki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

BASE-COLLECTOR JUNCTION; SHALLOW-BASE TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0026838232     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.123487     Document Type: Article

References (12)

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