Analytical base transit time model for high-injection regions

Solid State Electronics

Volumn 37, Issue 3, 1994, Pages 487-493

  Suzuki, Kunihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRONS; ENERGY GAP; FORECASTING; GATES (TRANSISTOR); PERTURBATION TECHNIQUES; SEMICONDUCTOR DOPING; TRANSIT TIME DEVICES; VELOCITY;

BASE TRANSIT TIME MODEL; BOLTZMANN CONSTANT; COLLECTOR CURRENT DENSITY; ELECTRON DIFFUSION COEFFICIENT; ELECTRON INJECTION; ELECTRON MOBILITY; GAUSSIAN DOPED BASE; HIGH INJECTION REGIONS; KIRK EFFECT; WEBSTER EFFECT;

SEMICONDUCTOR DEVICE MODELS;

EID: 0028398881     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90016-7     Document Type: Article

References (11)

1. The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
2. Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction
3. On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current
4. T) falloff at high current densities