Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region

Solid State Electronics

Volumn 28, Issue 11, 1985, Pages 1101-1103

  Kroemer, H ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASE TRANSIT TIME; CURRENT FLOW; ELECTRON TRANSPORT; HETEROSTRUCTURE; TWO INTEGRAL RELATIONS;

TRANSISTORS, BIPOLAR;

EID: 0022162070     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(85)90190-X     Document Type: Article

References (11)

1. Heterostructure bipolar transistors: What should we build?
2. The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
3. A Charge Control Relation for Bipolar Transistors
4. An Integral Charge Control Model of Bipolar Transistors
5. Stored Charge Method of Transistor Base Transit Analysis