Measurements of bandgap narrowing in Si bipolar transistors

Solid State Electronics

Volumn 19, Issue 10, 1976, Pages 857-862

  Slotboom, J W ^a   de Graaff, H C ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - CHARGE CARRIERS;

TRANSISTORS, BIPOLAR;

EID: 0017014216     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(76)90043-5     Document Type: Article

References (34)

1. The temperature dependence of ideal gain in double diffused silicon transistors
2. Investigation of current-gain temperature dependence in silicon transistors
3. The influence of heavy doping on the emitter efficiency of a bipolar transistor
4. Transport equations in heavy doped silicon
5. Calculation of the emitter efficiency of bipolar transistors
6. Influence of heavy doping effects on the fT prediction of transistors
7. Resistivity of Bulk Silicon and of Diffused Layers in Silicon
8. Properties of Silicon and Germanium: II
9. Effect of emitter doping on device characteristics
10. Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters