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1
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0020768976
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A time-division multiplexer IC for bit rates up to about 2 Gbit/s
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H.-M. Rein, D. Daniel, R. H. Derksen, U. Langmann, and B. G. Bosch, “A time-division multiplexer IC for bit rates up to about 2 Gbit/s,” IEEE J. Solid-State Circuits, vol. SC-19, pp. 306–310, 1984
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Rein, H.-M.1
Daniel, D.2
Derksen, R.H.3
Langmann, U.4
Bosch, B.G.5
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2
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0018505201
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Bipolar transistor design for optimized power-delay logic circuits
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D. D. Tang and P. M. Solomon, “Bipolar transistor design for optimized power-delay logic circuits,” IEEE J. Solid-State Circuits, vol. SC-14, pp. 679–684, 1979
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Tang, D.D.1
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3
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0020165828
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High-speed bipolar logic circuits with low power consumption for LSI—A comparison
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R. Ranfft and H.-M. Rein, “High-speed bipolar logic circuits with low power consumption for LSI—A comparison,” IEEE J. Solid-State State Circuits, vol. SC-17, pp. 703–712, 1982
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(1982)
IEEE J. Solid-State State Circuits
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Ranfft, R.1
Rein, H.-M.2
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4
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0020162531
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A simple optimization procedure for bipolar subnanosecond IC’s
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—, “A simple optimization procedure for bipolar subnanosecond ond IC’s,”Microelectron. J., vol. 13, no. 4, pp. 23–28, 1982
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5
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A charge control relation for bipolar transistors
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Gummel, H.K.1
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0014780722
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An integral charge control model of bipolar transistors
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Gummel, H.K.1
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0004316281
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SPICE version 2G user's guide
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D. Vladimirescu, K. Zhang, D. R. Newton, D. O. Pederson, and A. Sangiovanni-Vincentelli, “SPICE version 2G user's guide,” Dep. Electric. Engineer. Comput. Sci., University of California, Berkeley, 1981
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Dep. Electric. Engineer. Comput. Sci., University of California, Berkeley
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Vladimirescu, D.1
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9
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84913330666
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Ein Modell für schnelle Bipolartransistoren unter Einbeziehung des Hochstrombereiches
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H. Stübing, “Ein Modell für schnelle Bipolartransistoren unter Einbeziehung des Hochstrombereiches,” Dr.Ing. dissertation, Ruhr-Universität Bochum, Germany, 1984
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Dr.-Ing. dissertation, Ruhr-Universität Bochum, Germany
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Stübing, H.1
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10
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84939367560
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A compact physical model for high-speed bipolar transistors at high current densities
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H. Stübing, H.-M. Rein, and M. Schröter, “A compact physical model for high-speed bipolar transistors at high current densities,” to be published.
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to be published
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Stübing, H.1
Rein, H.-M.2
Schröter, M.3
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11
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84916430884
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A self-consistent iterative scheme for one-dimen-sional steady-state transistor calculations
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H. K. Gummel, “A self-consistent iterative scheme for one-dimen-sional steady-state transistor calculations,” IEEE Trans. Electron Devices, vol. ED-11, pp. 455–465, 1964
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Gummel, H.K.1
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12
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84917974063
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Computer-aided aided transistor design, characterization, and optimization
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Ghosh, H.N.1
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13
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0020545515
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Proper choice of the measuring frequency for deter-mining mining fTof bipolar transistors
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H.-M. Rein, “Proper choice of the measuring frequency for deter-mining mining f T, of bipolar transistors,” Solid-State Electron., vol. 16, pp. 75–82, 929, 1983
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Solid-State Electron
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Rein, H.-M.1
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14
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0020588565
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Device modeling
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W. L. Engl, H. K. Dirks, and B. Meinerzhagen, “Device modeling,” Proc. IEEE, vol. 71, pp. 10–33, 1983
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Engl, W.L.1
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15
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0015655220
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Computer-aided two-dimensional analysis of bipolar transistors
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J. W. Slotboom, “Computer-aided two-dimensional analysis of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED. 20, pp. 669–679, 1973
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IEEE Trans. Electron Devices
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Slotboom, J.W.1
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0001083140
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The effects of distributed base potential on emitter current injection density and effective base resistance for stipe transistor geometries
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J. R. Hauser, “The effects of distributed base potential on emitter current injection density and effective base resistance for stipe transistor geometries,” IEEE Trans. Electron Devices, vol. ED.11, pp.238-242, 1964
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Hauser, J.R.1
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17
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84938005917
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A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device
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H. N. Ghosh, “A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device,” IEEE Trans. Electron Devices, vol. ED-12, pp. 513–531, 1965
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Ghosh, H.N.1
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18
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0021459462
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A simple method for separation of the internal and external (peripheral) currents of bipolar transistors
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H.-M. Rein, “A simple method for separation of the internal and external (peripheral) currents of bipolar transistors,” Solid-State Electron., vol. 17, pp. 625–632, 1984
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(1984)
Solid-State Electron
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Rein, H.-M.1
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19
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84939372048
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Two-dimensional modeling of high-speed bipolar transistors at high current densities using the integral charge control relation
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M. Schröter and H.-M. Rein, “Two-dimensional modeling of high-speed bipolar transistors at high current densities using the integral charge control relation,” presented at the ESSDERC ‘84, Lille, France, Sept. 1984; also Physica B, special issue, 1985
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(1985)
presented at the ESSDERC 84
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Schröter, M.1
Rein, H.-M.2
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20
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84937658108
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A theory of transistor cutoff frequency fall-off at high current density
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Kirk, C.T.1
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