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Volumn 36, Issue 4, 1993, Pages 563-568

A d.c. intrinsic base resistance model considering resistivity modulation for arbitrarily doped transistors

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DEVICE MODELS;

EID: 0027576811     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90267-T     Document Type: Article
Times cited : (5)

References (15)
  • 1
    • 0001083140 scopus 로고
    • The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries
    • (1964) IEEE Transactions on Electron Devices , vol.11 ED , pp. 238
    • Hauser1
  • 13
    • 84916550120 scopus 로고    scopus 로고
    • K. Suzuki, in IEDM 1992. In press
  • 15
    • 84916550119 scopus 로고    scopus 로고
    • A. Azuma, T. Maeda and H. Momose, in IEEE 1991 Bipolar Circuits and Technology Meeting, pp. 182–184


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.