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Volumn 36, Issue 4, 1993, Pages 563-568
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A d.c. intrinsic base resistance model considering resistivity modulation for arbitrarily doped transistors
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
SEMICONDUCTOR DEVICE MODELS;
ARBITRARILY DOPED TRANSISTORS;
BASE RESISTANCE;
DC RESISTANCE;
HIGH-SPEED BIPOLAR TRANSISTORS;
RESISTIVITY MODULATION;
BIPOLAR TRANSISTORS;
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EID: 0027576811
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(93)90267-T Document Type: Article |
Times cited : (5)
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References (15)
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