MEASUREMENT OF ELECTRON LIFETIME, ELECTRON MOBILITY AND BAND-GAP NARROWING IN HEAVILY DOPED P-TYPE SILICON.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1986, Pages 24-27

  Swirhun, S E ^a   Kwark, Y H ^a   Swanson, R M ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - DOPING;

BAND-GAP NARROWING; ELECTRON DIFFUSION LENGTH; ELECTRON LIFETIME; ELECTRON MOBILITY; MINORITY CARRIER TRANSPORT;

ELECTRONS;

EID: 0022957473     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1986.191101     Document Type: Conference Paper

References (12)