Single particle-induced latchup

IEEE Transactions on Nuclear Science

Volumn 43, Issue 2 PART 1, 1996, Pages 522-532

  Bruguier, G ^a   Palau, J M ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC PROPERTIES; ENERGY TRANSFER; FAILURE ANALYSIS; IONS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

ELECTRON HOLE PAIRS; ELECTRONIC DEVICE; HARD FAILURE MODE; HARDENING SOLUTIONS; HEAVY IONS; SINGLE EVENT LATCHUP;

RADIATION EFFECTS;

EID: 0030127518     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.490898     Document Type: Article

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