Use of a pulsed laser as an aid to transient upset testing of I2L LSI microcircuits

IEEE Transactions on Nuclear Science

Volumn 25, Issue 6, 1978, Pages 1489-1493

  Ellis, T D ^a   Kim, Y D ^a  

^a NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS - LARGE SCALE INTEGRATION;

INTEGRATED CIRCUIT TESTING;

EID: 0018062077     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1978.4329559     Document Type: Article

References (3)

1. “The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and Circuits”, D. H. Habing, IEEE Transactions on Nuclear Science, Oct. 1965
2. Optical Properties of Semiconductors, T. S. Moss, Buttersworths, London (1961)
3. 2L/MTL: A 20ns Process/Structure”, J. Herman, S. Evans, and B. Sloan, Jr., IEEE Journal of Solid State Circuits, Vol. SC-12, No. 2, April 1977