Exploitation of a Pulsed Laser to Explore Transient Effects on Semiconductor Devices

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1406-1410

  Hardman, Mary Ann ^a   Edwards, Adrian R ^a  

^a BAE SYSTEMS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA RAYS; LASERS, SEMICONDUCTOR - APPLICATIONS;

PROMPT GAMMA SIMULATOR; PULSED LASER; RADIATION SIMULATORS; TRANSIENT EFFECTS;

SEMICONDUCTOR DEVICES;

EID: 0021596158     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333520     Document Type: Article

References (5)

1. D.H.Habing, ‘The Use of Lasers to Simulate Radiation Induced Transients in Semiconductor Devices and Circuits’, IEEE Trans. Nuc. Sci. Vol. NS - 12, Oct 1965.
2. T.D.Ellis and Y.D.Kim, “Use of a Pulsed Laser as an Aid to Transient Upset Testing of IKL LSI Microcircuits”, IEEE Trans. Nuc. Sci. Vol. NS - 25, Dec. 1976.
3. T.J.Stultz, J.L.Crowley and F.A.Junga, “An Investigation of the Transient Ionising Radiation Response of Diffused Resistors using a Pulsed Laser'. IEEE Trans. Nuc. Sci. Vol. NS - 27, Oct. 1980.
4. E.E.King, B.AhIport, G.Tettemer, K.Mulker and P.Linderman, ‘Transient Radiation Screening of Silicon Devices using Backside Laser Irradiation’, IEEE Trans. Nuc. Sci. Vol NS - 29, Dec. 1982.
5. E.E.King, G.Tettemer, P.Linderman and P.Micheletti, ‘The Hardness Assurance Wafer Probe - HAWP’ IEEE Trans. Nuc. Sci. Vol NS - 30, Dec 1983.