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Volumn 37, Issue 6, 1990, Pages 1886-1893

Latchup in CMOS from single particles

Author keywords

[No Author keywords available]

Indexed keywords

CALIFORNIUM; LASER PULSES; TRANSISTORS, BIPOLAR;

EID: 0025682739     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101205     Document Type: Article
Times cited : (51)

References (16)
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  • 3
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    • Total Dose Radiation Hardened Latch-up Free CMOS Structures for Radiation-Tolerant VLSI Designs
    • H. Hatano and S. Takasuka, “Total Dose Radiation Hardened Latch-up Free CMOS Structures for Radiation-Tolerant VLSI Designs,” IEEE Trans. Nucl. Sci., NS-33 1505 (1986).
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    • Hospelhorn, R.L.1    Shafer, B.D.2
  • 5
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    • Mechanisms for the Latchup Window Effect in Integrated Circuits
    • A. H. Johnston and M. P. Bare, “Mechanisms for the Latchup Window Effect in Integrated Circuits,” IEEE Trans. Nucl. Sci., NS-32, 4018 (1985).
    • (1985) IEEE Trans. Nucl. Sci. , vol.NS-32 , pp. 4018
    • Johnston, A.H.1    Bare, M.P.2
  • 6
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    • Heavy Ion-Induced Single Event Upsets of Modern Microcircuits
    • R. Shoga and W. A. Kolasinski, “Heavy Ion-Induced Single Event Upsets of Modern Microcircuits,” IEEE Trans. Nucl. Sci., NS-31, 1190 (1984).
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  • 7
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    • Temperature and Epi Thickness Dependence of the Heavy Ion Induced Latchup Threshold for a CMOS/EPI 16k Static Ram
    • L. S. Smith, et al., “Temperature and Epi Thickness Dependence of the Heavy Ion Induced Latchup Threshold for a CMOS/EPI 16k Static Ram,” IEEE Trans. Nucl. Sci., NS-34, 1800 (1987).
    • (1987) IEEE Trans. Nucl. Sci. , vol.NS-34 , pp. 1800
    • Smith, L.S.1
  • 8
    • 0020247202 scopus 로고
    • Error Analysis and Prevention of Cosmic-Induced Induced Soft Errors in Static CMOS RAMS
    • S. E. Diehl, et al., “Error Analysis and Prevention of Cosmic-Induced Induced Soft Errors in Static CMOS RAMS,” IEEE Trans. Nucl. Sci., NS-29, 2032 (1982).
    • (1982) IEEE Trans. Nucl. Sci. , vol.NS-29 , pp. 2032
    • Diehl, S.E.1
  • 9
    • 0024908419 scopus 로고
    • The Effect of Circuit Topology on Radiation-Induced Latchup
    • A. H. Johnston, R. E. Plaag and M. P. Baze, “The Effect of Circuit Topology on Radiation-Induced Latchup,” IEEE Trans. Nucl. Sci., NS-36, 2229, (1989).
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  • 12
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    • The Use of Cf-252 to Measure Latchup Cross Sections as a Function of LET
    • M. Reier, “The Use of Cf-252 to Measure Latchup Cross Sections as a Function of LET,” IEEE Trans. Nucl. Sci., NS-33, 1642 (1986).
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    • Reier, M.1
  • 13
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    • Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits
    • M. Shoga and D. Binder, “Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits,” IEEE Trans. Nucl. Sci., NS-33, 1714 (1986).
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    • Shoga, M.1    Binder, D.2
  • 14
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  • 15
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  • 16
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    • Charge Collection in Silicon for Ions of Different Energy but Same Linear Energy Transfer (LET)
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    • Stapor, W.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.