Dynamics of Heavy-Ion-Induced Latchup in CMOS Structures

IEEE Transactions on Electron Devices

Volumn 35, Issue 11, 1988, Pages 1885-1891

  Aoki, Takahiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS -- SPACE APPLICATIONS; IONS; SEMICONDUCTOR DEVICES, MOS; TRANSISTORS;

CMOS INTEGRATED CIRCUITS; GUARD BANDS; HEAVY-ION-INDUCED LATCHUP; TRANSISTOR DECOUPLING; TWO DIMENSIONAL TRANSIENT DEVICE SIMULATOR;

INTEGRATED CIRCUITS, LSI;

EID: 0024104904     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.7401     Document Type: Article

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