Latch-up in cmos integrated circuits

IEEE Transactions on Nuclear Science

Volumn 20, Issue 6, 1973, Pages 293-299

  Gregory, B L ^a   Shafer, B D ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS - IRRADIATION;

INTEGRATED CIRCUITS;

EID: 0015770573     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1973.4327410     Document Type: Article

References (2)

1. J. F. Leavy and R. A. Poll, “Radiation-Induced Integrated Circuit Latch-up,” IEEE Trans. Nuc. sci., NS-16, p. 96, December 1969.
2. W. J. Dennehy, A. G. Holmes-Siedle, and W. F. Leopold, “Transient Radiation Response of Complementary-Symmetry MOS Integrated Circuits,” IEEE Trans. Nuc. Sci., NS-16, p. 114, December 1969.