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Volumn 35, Issue 6, 1988, Pages 1585-1590

Charge collection in silicon for ions of different energy but same linear energy transfer (LET)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024169257     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25502     Document Type: Article
Times cited : (78)

References (12)
  • 1
    • 0001242477 scopus 로고
    • Electron Multiplication in Silicon and Germanium
    • K.G. McKay and K.B. McAfee, “Electron Multiplication in Silicon and Germanium,” Physical Review, vol. 91, pp. 1079–1084 (1953).
    • (1953) Physical Review , vol.91 , pp. 1079-1084
    • McKay, K.G.1    McAfee, K.B.2
  • 2
    • 0023601158 scopus 로고
    • Measurement of SEU Thresholds and Cross Sections at Fixed Incident Angles
    • T.L. Criswell, D.L. Oberg, J.L. Wert, P.R. Measel, and W.E. Wilson, “Measurement of SEU Thresholds and Cross Sections at Fixed Incident Angles,” IEEE Trans. Nucl. Sci., Vol. NS-34, No. 6, 1316 (1987).
    • (1987) IEEE Trans. Nucl. Sci. , vol.NS-34 , Issue.6 , pp. 1316
    • Criswell, T.L.1    Oberg, D.L.2    Wert, J.L.3    Measel, P.R.4    Wilson, W.E.5
  • 4
    • 0003412161 scopus 로고
    • The Stopping and Range of Ions in Solids
    • Pergamon Press, New York
    • J.F. Ziegler, J.P. Biersack, and U. Littmark, “The Stopping and Range of Ions in Solids,” Pergamon Press, New York, 1985.
    • (1985)
    • Ziegler, J.F.1    Biersack, J.P.2    Littmark, U.3
  • 5
    • 84939325224 scopus 로고    scopus 로고
    • Practical Approach to Ion Track Energy Distribution
    • accepted for publication
    • W.J. Stapor and P.T. McDonald, “Practical Approach to Ion Track Energy Distribution,” accepted for publication, Journal of Applied Physics.
    • Journal of Applied Physics
    • Stapor, W.J.1    McDonald, P.T.2
  • 8
    • 0001063858 scopus 로고
    • A New Method for Calibrating the Pulse-Height Height Defect in Solid State Detectors
    • J.B. Moulton, J.E. Stephenson, R.P. Schmitt, and G.J. Wozniak, “A New Method for Calibrating the Pulse-Height Height Defect in Solid State Detectors,” Nucl. Inst. and Meth. 157, 325 (1978).
    • (1978) Nucl. Inst. and Meth. , vol.325 , pp. 157
    • Moulton, J.B.1    Stephenson, J.E.2    Schmitt, R.P.3    Wozniak, G.J.4
  • 9
    • 7044280639 scopus 로고
    • Range and Stopping Power Tables for Heavy Ions
    • L.C. Northcliffe and R.F. Schilling, “Range and Stopping Power Tables for Heavy Ions,” Nucl. Data Tables A7,233 (1970).
    • (1970) Nucl. Data Tables , vol.A7 , pp. 233
    • Northcliffe, L.C.1    Schilling, R.F.2
  • 10
    • 0003522474 scopus 로고
    • Stopping Cross-Sections for Energetic Ions in All Elements
    • Pergamon Press, New York
    • J.F. Ziegler, “Stopping Cross-Sections for Energetic Ions in All Elements,” Vol 5, Pergamon Press, New York, 1980.
    • (1980) , vol.5
    • Ziegler, J.F.1
  • 11
    • 0001820362 scopus 로고
    • Energy Loss and Energy Loss Straggling of Fast Heavy Ions in Matter
    • H. Geissel et al., “Energy Loss and Energy Loss Straggling of Fast Heavy Ions in Matter,” Nucl. Instr. and Meth. 194, 21 (1982).
    • (1982) Nucl. Instr. and Meth. , vol.194 , pp. 21
    • Geissel, H.1
  • 12
    • 0004005306 scopus 로고
    • Physics of Semiconductor Devices, Second Edition
    • Wiley Intersciences, New York
    • S.M. Sze, “Physics of Semiconductor Devices, Second Edition,” Wiley Intersciences, New York, pp. 35–38, 1981.
    • (1981) , pp. 35-38
    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.