The effect of circuit topology on radiation-induced latchup

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2229-2238

  Johnston, A H ^a   Plaag, R E ^a   Baze, M P ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--FIXED; INTEGRATED CIRCUITS;

LATCHUP TESTS; PHOTOCURRENT RESPONSES; SRAM (STATIC RANDOM-ACCESS MEMORY);

SEMICONDUCTOR DEVICES, MOS;

EID: 0024908419     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45429     Document Type: Article

References (18)

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