SEU and latchup tolerant advanced CMOS technology

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1869-1875

  Koga, R ^a   Crawford, K B ^a   Hansel, S J ^a   Johnson, B M ^a   Lau, D D ^a   Penzin, S H ^a   Pinkerton, S D ^a   Maher, M C ^b  

^a AEROSPACE CORPORATION   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COSMIC RAYS; IONS; MICROELECTRONICS;

HEAVY IONS; LINEAR ENERGY TRANSFER; SINGLE EVENT UPSETS;

INTEGRATED CIRCUITS, CMOS;

EID: 0025640303     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101203     Document Type: Article

References (6)

1. K Saliman and DK Nichols, “Latchup in CMOS Devices from Heavy Ions,” IEEE Trans. Nucl. Sci., NS-30, pp. 4514–4519, 1983.
2. R Koga, WA Kolasinski, MT Marra, and WA Hanna, “Techniques of Microprocessor Testing and SEU-Rate Prediction,” IEEE Trans. Nucl. Sci., NS-32, pp. 4219–4224, 1985.
3. JH Sokol, WA Kolasinski, M Wong, R Koga, RV Suhrke, and TH Frey, “Advantage of Advanced CMOS over Advanced TTL in a Cosmic Ray Environment,” IEEE Trans. Nucl. Sci., NS-34, pp. 1338–1340, 1987.
4. J. Fry, FACT Radiation Test Results, National Semiconductor Corporation, Maine, 1987.
5. M.C. Maher, “Dose Rate Response of Advanced CMOS Products,” GOMAC DIGEST, pp. 143–145, 1989.
6. T Chapuis and H Constant, “Latchup On CMOS/EPI Devices,” IEEE Trans. Nucl. Sci., this issue.