Electrical determination of bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Si1-XGeX, and ion implanted bases

IEEE Transactions on Electron Devices

Volumn 43, Issue 5, 1996, Pages 774-783

  Ashburn, P ^b   Boussetta, H ^c   Hashim, M D R ^b   Chantre, A ^c   Mouis, M ^c   Parker, G J ^a,b   Vincent, G ^c  

^a IEEE

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; ION IMPLANTATION; MATHEMATICAL MODELS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

BANDGAP NARROWING; EPITAXIAL BASE TRANSISTORS; GUMMEL NUMBER; ION IMPLANTED BASES;

BIPOLAR TRANSISTORS;

EID: 0030151155     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.491255     Document Type: Article

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